Surface Morphology and Exchange Bias Anisotropy Studies in Large Area Deposited Co2FeSi Ir50Mn50 Multi Layers For Spintronic Applications

Surface morphology and magnetic properties of ferromagnetic Heusler alloy Co2FeSi thin films and their multi-layers with anti-ferromagnetic Ir50Mn50, which find applications in spintronic devices were investigated. The sputtering process flow for large area deposition of thin films on 3 inch size thermally oxidized single crystal Si(100)/SiO2 substrates have been developed by optimizing the sputtering geometry and other process parameters. A uniform film composition, thickness, smooth surface, good crystallinity and magnetic properties have been achieved in the films over 3-inch size wafers. The isotropic magnetic properties such as saturation/remanent magnetizations, coercivity were achieved in Co2FeSi films deposited on 3-inch size Si(100)/SiO2 wafers with 15 nm Cr buffer layer. An exchange bias anisotropy has been established in Co2FeSi/IrMn multilayer by magnetic annealing process using in-house made magnetic annealing set up. A maximum exchange bias anisotropy field, Hex of 178 Oe and low coercivity, Hc of 85 Oe has been achieved in the Co2FeSi/IrMn multilayer stacks suitable for magnetic tunnel junctions for spintronic applications.