Lin Cheng;Hongliang Lu;Silu Yan;Junjun Qi;Wei Cheng;Yuming Zhang;Yimen Zhang
{"title":"InP HBT老化小信号等效电路建模方法","authors":"Lin Cheng;Hongliang Lu;Silu Yan;Junjun Qi;Wei Cheng;Yuming Zhang;Yimen Zhang","doi":"10.1109/TDMR.2023.3323899","DOIUrl":null,"url":null,"abstract":"To predict the aging effect on indium phosphide (InP) heterojunction bipolar transistors (HBTs), an aging small-signal equivalent circuit modeling method is proposed in this paper, with special attention to the degradation of the key small-signal model parameters of the InP HBTs in aging experiments. Based on the analysis of the aging sensitivity of the complete small-signal equivalent circuit parameters, semi-empirical approach is used to model the degradation of the key parameters in bipolar transistors as a function of stress magnitude and stress time. Its validity and accuracy are demonstrated by comparison of the modeled and measured results for InP HBTs before and after degradation.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"23 4","pages":"530-536"},"PeriodicalIF":2.5000,"publicationDate":"2023-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT\",\"authors\":\"Lin Cheng;Hongliang Lu;Silu Yan;Junjun Qi;Wei Cheng;Yuming Zhang;Yimen Zhang\",\"doi\":\"10.1109/TDMR.2023.3323899\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To predict the aging effect on indium phosphide (InP) heterojunction bipolar transistors (HBTs), an aging small-signal equivalent circuit modeling method is proposed in this paper, with special attention to the degradation of the key small-signal model parameters of the InP HBTs in aging experiments. Based on the analysis of the aging sensitivity of the complete small-signal equivalent circuit parameters, semi-empirical approach is used to model the degradation of the key parameters in bipolar transistors as a function of stress magnitude and stress time. Its validity and accuracy are demonstrated by comparison of the modeled and measured results for InP HBTs before and after degradation.\",\"PeriodicalId\":448,\"journal\":{\"name\":\"IEEE Transactions on Device and Materials Reliability\",\"volume\":\"23 4\",\"pages\":\"530-536\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2023-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Device and Materials Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10285448/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10285448/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT
To predict the aging effect on indium phosphide (InP) heterojunction bipolar transistors (HBTs), an aging small-signal equivalent circuit modeling method is proposed in this paper, with special attention to the degradation of the key small-signal model parameters of the InP HBTs in aging experiments. Based on the analysis of the aging sensitivity of the complete small-signal equivalent circuit parameters, semi-empirical approach is used to model the degradation of the key parameters in bipolar transistors as a function of stress magnitude and stress time. Its validity and accuracy are demonstrated by comparison of the modeled and measured results for InP HBTs before and after degradation.
期刊介绍：
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
