二硫化钼纳米片/二硫化钼纳米线的合理设计及其增强析氢反应

IF 1.2 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY Chalcogenide Letters Pub Date : 2023-09-20 DOI:10.15251/cl.2023.209.639

L. Yang, X. Q. Yuan, R. Y. Liu, R. X. Song, Q. W. Wang, W. Liang

{"title":"二硫化钼纳米片/二硫化钼纳米线的合理设计及其增强析氢反应","authors":"L. Yang, X. Q. Yuan, R. Y. Liu, R. X. Song, Q. W. Wang, W. Liang","doi":"10.15251/cl.2023.209.639","DOIUrl":null,"url":null,"abstract":"In this paper, we report a facile method for the synthesis of MoS2 nanosheet/ MoS2 nanowire homostructures by growing MoS2 nanosheets on the surface of MoS2 nanowires. Benefiting from the uniform coating of MoS2 nanosheets on the surface of MoS2 nanowires, the MoS2 nanosheet/ MoS2 nanowire homostructures highly expose their electrocatalytic active edge sites and exhibit an enhanced electrocatalytic performance. It demonstrates a low overpotential of 107 mV at 10 mA/cm2 and a small Tafel slope of 64 mV/dec in 0.5 M H2SO4. This work provides an inspiration for the design of efficient electrocatalysts with no stacking and aggregation structure.","PeriodicalId":9710,"journal":{"name":"Chalcogenide Letters","volume":"19 1","pages":"0"},"PeriodicalIF":1.2000,"publicationDate":"2023-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Rational design of MoS2 nanosheet/ MoS2 nanowire homostructures and their enhanced hydrogen evolution reaction\",\"authors\":\"L. Yang, X. Q. Yuan, R. Y. Liu, R. X. Song, Q. W. Wang, W. Liang\",\"doi\":\"10.15251/cl.2023.209.639\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report a facile method for the synthesis of MoS2 nanosheet/ MoS2 nanowire homostructures by growing MoS2 nanosheets on the surface of MoS2 nanowires. Benefiting from the uniform coating of MoS2 nanosheets on the surface of MoS2 nanowires, the MoS2 nanosheet/ MoS2 nanowire homostructures highly expose their electrocatalytic active edge sites and exhibit an enhanced electrocatalytic performance. It demonstrates a low overpotential of 107 mV at 10 mA/cm2 and a small Tafel slope of 64 mV/dec in 0.5 M H2SO4. This work provides an inspiration for the design of efficient electrocatalysts with no stacking and aggregation structure.\",\"PeriodicalId\":9710,\"journal\":{\"name\":\"Chalcogenide Letters\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":1.2000,\"publicationDate\":\"2023-09-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chalcogenide Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15251/cl.2023.209.639\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chalcogenide Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15251/cl.2023.209.639","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

本文报道了一种在MoS2纳米线表面生长MoS2纳米片的简单方法来合成MoS2纳米片/ MoS2纳米线同质结构。由于在MoS2纳米线表面均匀地涂覆了MoS2纳米片，MoS2纳米片/ MoS2纳米线的同质结构高度暴露了其电催化活性边缘位点，并表现出增强的电催化性能。它在10 mA/cm2下的过电位为107 mV，在0.5 M H2SO4中，塔菲尔斜率很小，为64 mV/dec。本研究为设计无堆积、无聚集结构的高效电催化剂提供了启示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Rational design of MoS2 nanosheet/ MoS2 nanowire homostructures and their enhanced hydrogen evolution reaction

In this paper, we report a facile method for the synthesis of MoS2 nanosheet/ MoS2 nanowire homostructures by growing MoS2 nanosheets on the surface of MoS2 nanowires. Benefiting from the uniform coating of MoS2 nanosheets on the surface of MoS2 nanowires, the MoS2 nanosheet/ MoS2 nanowire homostructures highly expose their electrocatalytic active edge sites and exhibit an enhanced electrocatalytic performance. It demonstrates a low overpotential of 107 mV at 10 mA/cm2 and a small Tafel slope of 64 mV/dec in 0.5 M H2SO4. This work provides an inspiration for the design of efficient electrocatalysts with no stacking and aggregation structure.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Chalcogenide Letters MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

1.80

自引率

20.00%

发文量

审稿时长

1 months

期刊介绍： Chalcogenide Letters (CHL) has the aim to publish rapidly papers in chalcogenide field of research and appears with twelve issues per year. The journal is open to letters, short communications and breakings news inserted as Short Notes, in the field of chalcogenide materials either amorphous or crystalline. Short papers in structure, properties and applications, as well as those covering special properties in nano-structured chalcogenides are admitted.