等离子体增强琼钙化玻璃薄膜结构的光敏性

I. Indutnyi, S.V. Mamykin, V. Mynko, M. Sopinskyy, A.A. Korchovyi
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摘要

本文介绍了等离激元增强光刺激下银在硫系玻璃(ChG)薄膜中的扩散特性,特别是在As 2 s3和ges2薄膜中的扩散特性。为了保证银膜和ChG膜交界面表面等离子体极化子(SPPs)的激发,采用周期为899 nm和694 nm的银衍射光栅作为衬底。将样品暴露在氦氖激光(λ = 632.8 nm)的p偏振辐射下。用衰减两个数量级的相同激光辐射检测SPP,从而研究Ag-ChG薄层结构中光刺激过程的动力学。结果表明,在暴露初期,SPP电磁场显著提高了ChG中银离子的光激通量(提高了2-3倍)。银在ChG中的光溶解动力学由所研究的硫系薄膜的颗粒结构特征来定义。对于有效厚度为8 nm的ges2薄膜,银光掺杂引起薄膜折射率增加的动力学近似为对数依赖关系。对于ag - as2s3结构(as2s3膜的有效厚度为14.8 nm),该动力学更接近于线性动力学;此外,在没有SPP激发的情况下,光掺杂的动力学是超线性的,而在等离子激元激发下,动力学是亚线性的。在所研究的结构中,加速光激扩散过程的主要物理机制似乎是电子-空穴对的加速产生,这种加速产生发生在靠近金属界面的ChG层,SPP电磁场强度最大。和/或等离子体辅助热载流子的产生,由于等离子体在金属薄膜表面的散射和随后的内部光电发射电子从银到硫族化物。
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Plasmon enhancement of photosensitivity of Ag–chalcogenide glass thin film structures
In this paper, we present the results of studying the features of plasmon- enhanced photostimulated diffusion of silver into thin films of chalcogenide glasses (ChG), in particular, As 2 S 3 and GeSe 2 . To ensure excitation of surface plasmon-polaritons (SPPs) at the interface between silver and ChG films, silver diffraction gratings with periods of 899 and 694 nm were used as substrates. The samples were exposed to the p-polarized radiation of a He-Ne laser (λ = 632.8 nm). The radiation of the same laser, attenuated by two orders of magnitude, was used to detect SPP, which enabled to study the kinetics of photostimulated processes in the thin-layer structure of Ag–ChG. It has been established that in the initial period of exposure, the SPP electromagnetic field significantly enhances the photostimulated flux of silver ions in ChG (by 2-3 times). The photodissolution kinetics of Ag in ChG is defined by the features of the granular structure of the investigated thin chalcogenide films. For the GeSe 2 film with the effective thickness 8 nm, the kinetics of the film refractive index increase caused by silver photodoping is well approximated by a logarithmic dependence. For the Ag–As 2 S 3 structure (the effective thickness of the As 2 S 3 film is 14.8 nm), this kinetics is closer to the linear one; moreover, for photodoping without SPP excitation, the kinetics is somewhat superlinear, while with plasmon excitation, it is sublinear. The main physical mechanism responsible for the acceleration of the process of photostimulated diffusion in the structure under study appears to be an accelerated generation of electron-hole pairs, which takes place in the ChG layer near the interface with the metal, where the SPP electromagnetic field strength is maximum, and/or plasmon- assisted hot carrier generation due to plasmon scattering on the surface of the metal film and subsequent internal photoemission of electrons from silver into chalcogenide.
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