阳离子 Si4+↔Ge4+ 和 P5+↔Ge4+ 子取代对单晶 Ag7(Si1-xGex)S5I 和 Ag6+x(P1-xGex)S5I 力学参数的影响

I. Shender, A. Pogodin, M. Filep, T. Malakhovska, O. Kokhan, V.S. Bilanych, K. V. Skubenych, O. I. Symkanych, V. Izai, L. Suslikov
{"title":"阳离子 Si4+↔Ge4+ 和 P5+↔Ge4+ 子取代对单晶 Ag7(Si1-xGex)S5I 和 Ag6+x(P1-xGex)S5I 力学参数的影响","authors":"I. Shender, A. Pogodin, M. Filep, T. Malakhovska, O. Kokhan, V.S. Bilanych, K. V. Skubenych, O. I. Symkanych, V. Izai, L. Suslikov","doi":"10.15407/spqeo26.04.408","DOIUrl":null,"url":null,"abstract":"Herein we present the results of microhardness investigations aimed at monocrystalline samples of Ag 7 (Si 1–x Ge x )S 5 I (0, 0.2, 0.4, 0.6, 0.8, 1) and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The dependence of microhardness H on the load P and composition were investigated. It has been observed that the microhardness dependence on the applied load is characterized by a tendency to decrease with increasing the load. It indicates a presence of “normal” size effect in both Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The revealed size effects of hardness in single crystals of Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1-x Ge x )S 5 I solid solutions have been analyzed within the framework of the gradient theory of plasticity. The corresponding parameters of the model of geometrically necessary dislocations have been determined.","PeriodicalId":21598,"journal":{"name":"Semiconductor physics, quantum electronics and optoelectronics","volume":"68 3","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of cation Si4+↔Ge4+ and P5+↔Ge4+ sub-stitution on the mechanical parameters of single crystals Ag7(Si1–xGex)S5I and Ag6+x(P1–xGex)S5I\",\"authors\":\"I. Shender, A. Pogodin, M. Filep, T. Malakhovska, O. Kokhan, V.S. Bilanych, K. V. Skubenych, O. I. Symkanych, V. Izai, L. Suslikov\",\"doi\":\"10.15407/spqeo26.04.408\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Herein we present the results of microhardness investigations aimed at monocrystalline samples of Ag 7 (Si 1–x Ge x )S 5 I (0, 0.2, 0.4, 0.6, 0.8, 1) and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The dependence of microhardness H on the load P and composition were investigated. It has been observed that the microhardness dependence on the applied load is characterized by a tendency to decrease with increasing the load. It indicates a presence of “normal” size effect in both Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The revealed size effects of hardness in single crystals of Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1-x Ge x )S 5 I solid solutions have been analyzed within the framework of the gradient theory of plasticity. The corresponding parameters of the model of geometrically necessary dislocations have been determined.\",\"PeriodicalId\":21598,\"journal\":{\"name\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"volume\":\"68 3\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor physics, quantum electronics and optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.15407/spqeo26.04.408\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor physics, quantum electronics and optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.15407/spqeo26.04.408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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摘要

本文介绍了针对Ag 7 (Si 1 - x Ge x) s5i(0,0.2, 0.4, 0.6, 0.8, 1)和Ag 6+x (p1 - x Ge x) s5i(0,0.25, 0.5, 0.75, 1)固溶体单晶样品的显微硬度研究结果。研究了微硬度H与载荷P和成分的关系。显微硬度对外加载荷的依赖性随着载荷的增加呈下降趋势。结果表明,Ag 7 (Si 1 - x Ge x) s5i和Ag 6+x (p1 - x Ge x) s5i(0,0.25, 0.5, 0.75, 1)固溶体均存在“正常”尺寸效应。在塑性梯度理论的框架下,分析了Ag 7 (Si 1-x Ge x) s5i和Ag 6+x (p1 -x Ge x) s5i固溶体单晶硬度的尺寸效应。确定了几何必要位错模型的相应参数。
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Influence of cation Si4+↔Ge4+ and P5+↔Ge4+ sub-stitution on the mechanical parameters of single crystals Ag7(Si1–xGex)S5I and Ag6+x(P1–xGex)S5I
Herein we present the results of microhardness investigations aimed at monocrystalline samples of Ag 7 (Si 1–x Ge x )S 5 I (0, 0.2, 0.4, 0.6, 0.8, 1) and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The dependence of microhardness H on the load P and composition were investigated. It has been observed that the microhardness dependence on the applied load is characterized by a tendency to decrease with increasing the load. It indicates a presence of “normal” size effect in both Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1–x Ge x )S 5 I (0, 0.25, 0.5, 0.75, 1) solid solutions. The revealed size effects of hardness in single crystals of Ag 7 (Si 1–x Ge x )S 5 I and Ag 6+x (P 1-x Ge x )S 5 I solid solutions have been analyzed within the framework of the gradient theory of plasticity. The corresponding parameters of the model of geometrically necessary dislocations have been determined.
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