Design of ohmic contacts between Janus MoSSe and two-dimensional metals

Two-dimensional semiconductors are considered as channel materials for field-effect transistors to overcome short-channel effects and reduce the device size. As the contacts to the metallic electrodes are decisive for the device performance, we study the electronic properties of contacts between Janus MoSSe and various two-dimensional metals. We demonstrate that weak interactions at these van der Waals contacts suppress Fermi level pinning and show that ohmic contacts can be formed for both terminations of Janus MoSSe, generating favorable transport characteristics. Two-dimensional semiconductors are considered as field-effect transistors to overcome short channel effects and reduce the device size. As contacts to the metallic electrodes are decisive for the device performance, we study the electronic properties of contacts between Janus MoSSe and various two-dimensional metals. We demonstrate that weak interactions at these van der Waals contacts suppress Fermi level pinning and show that ohmic contacts can be formed for both terminations of Janus MoSSe, generating favorable transport characteristics.