YU-CHIEN Wei, C. Chu, Ming-Hua Mao, You-Ru Lin, Hao-Hsiung Lin
{"title":"利用扫描光致发光显微镜直接提取薄膜中伏极扩散长度的新方法","authors":"YU-CHIEN Wei, C. Chu, Ming-Hua Mao, You-Ru Lin, Hao-Hsiung Lin","doi":"10.35848/1347-4065/ad18cd","DOIUrl":null,"url":null,"abstract":"In this study, we demonstrated a new method of scanning photoluminescence microscopy (SPLM) to directly extract ambipolar diffusion length in a GaAs thin film. The photoluminescence intensity of the GaAs thin film was recorded while the excitation source scanned along a 400-nm-wide slit between the metal masks to avoid the influence of surface recombination and light scattering at the sample edge. The experimental SPLM profile showed a simple-exponential-decay functional form and was numerically verified. A fitted decay length of 723 nm was extracted, which represents ambipolar diffusion length of the GaAs thin film and agrees well with our previous study.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"19 21","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2023-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new method for direct extraction of ambipolar diffusion length in a thin film by scanning photoluminescence microscopy\",\"authors\":\"YU-CHIEN Wei, C. Chu, Ming-Hua Mao, You-Ru Lin, Hao-Hsiung Lin\",\"doi\":\"10.35848/1347-4065/ad18cd\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, we demonstrated a new method of scanning photoluminescence microscopy (SPLM) to directly extract ambipolar diffusion length in a GaAs thin film. The photoluminescence intensity of the GaAs thin film was recorded while the excitation source scanned along a 400-nm-wide slit between the metal masks to avoid the influence of surface recombination and light scattering at the sample edge. The experimental SPLM profile showed a simple-exponential-decay functional form and was numerically verified. A fitted decay length of 723 nm was extracted, which represents ambipolar diffusion length of the GaAs thin film and agrees well with our previous study.\",\"PeriodicalId\":14741,\"journal\":{\"name\":\"Japanese Journal of Applied Physics\",\"volume\":\"19 21\",\"pages\":\"\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2023-12-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Japanese Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1347-4065/ad18cd\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad18cd","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
A new method for direct extraction of ambipolar diffusion length in a thin film by scanning photoluminescence microscopy
In this study, we demonstrated a new method of scanning photoluminescence microscopy (SPLM) to directly extract ambipolar diffusion length in a GaAs thin film. The photoluminescence intensity of the GaAs thin film was recorded while the excitation source scanned along a 400-nm-wide slit between the metal masks to avoid the influence of surface recombination and light scattering at the sample edge. The experimental SPLM profile showed a simple-exponential-decay functional form and was numerically verified. A fitted decay length of 723 nm was extracted, which represents ambipolar diffusion length of the GaAs thin film and agrees well with our previous study.
期刊介绍:
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS