Robust reverse bias safe operating area (RBSOA) and improved electrical performance in 3300V non-proportionally scaled insulated gate bipolar transistors (IGBTs)

Robustness under high temperature clamped inductive turn-off has been compared systematically among 3300V scaled Insulated Gate Bipolar Transistors (IGBTs) with scaling factor (k) from 1 to 10 by TCAD simulations. Degradation of Reverse Bias Safe Operating Area (RBSOA) has been observed in proportionally scaled IGBT, especially at high turn-off current density. Non-proportional scaling method has been proven to be able to restore the robustness degradation with RBSOA close to the original k=1 case. Moreover, the Rpf (P-floating connecting resistor) adjustment method adds more flexibility to device design, and also improves the overall electrical performance of non-proportionally scaled IGBTs. Besides, the adjustment of Rpf has been found to have minimal effect on RBSOA.