磁性半导体 Ga1-x-y Fe x Ni y Sb 中增强的磁各向异性和高空穴迁移率

IF 4.8 4区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Journal of Semiconductors Pub Date : 2024-01-01 DOI:10.1088/1674-4926/45/1/012101

Zhi Deng, Hailong Wang, Qiqi Wei, Lei Liu, Hongli Sun, Dong Pan, Dahai Wei, Jianhua Zhao

{"title":"磁性半导体 Ga1-x-y Fe x Ni y Sb 中增强的磁各向异性和高空穴迁移率","authors":"Zhi Deng, Hailong Wang, Qiqi Wei, Lei Liu, Hongli Sun, Dong Pan, Dahai Wei, Jianhua Zhao","doi":"10.1088/1674-4926/45/1/012101","DOIUrl":null,"url":null,"abstract":"(Ga,Fe)Sb is a promising magnetic semiconductor (MS) for spintronic applications because its Curie temperature (<italic toggle=\"yes\">T</italic>\nC) is above 300 K when the Fe concentration is higher than 20%. However, the anisotropy constant <italic toggle=\"yes\">K</italic>\nu of (Ga,Fe)Sb is below 7.6 × 103 erg/cm3 when Fe concentration is lower than 30%, which is one order of magnitude lower than that of (Ga,Mn)As. To address this issue, we grew Ga1-<italic toggle=\"yes\">x</italic>-<italic toggle=\"yes\">y</italic>\nFe\n<italic toggle=\"yes\">x</italic>\nNi\n<italic toggle=\"yes\">y</italic>\nSb films with almost the same <italic toggle=\"yes\">x</italic> (≈24%) and different <italic toggle=\"yes\">y</italic> to characterize their magnetic and electrical transport properties. We found that the magnetic anisotropy of Ga0.76-<italic toggle=\"yes\">y</italic>\nFe0.24Ni\n<italic toggle=\"yes\">y</italic>\nSb can be enhanced by increasing <italic toggle=\"yes\">y</italic>, in which <italic toggle=\"yes\">K</italic>\nu is negligible at <italic toggle=\"yes\">y</italic> = 1.7% but increases to 3.8 × 105 erg/cm3 at <italic toggle=\"yes\">y</italic> = 6.1% (<italic toggle=\"yes\">T</italic>\nC = 354 K). In addition, the hole mobility (<italic toggle=\"yes\">µ</italic>) of Ga1-<italic toggle=\"yes\">x</italic>-<italic toggle=\"yes\">y</italic>\nFe\n<italic toggle=\"yes\">x</italic>\nNi\n<italic toggle=\"yes\">y</italic>\nSb reaches 31.3 cm2/(V∙s) at <italic toggle=\"yes\">x</italic> = 23.7%, <italic toggle=\"yes\">y</italic> = 1.7% (<italic toggle=\"yes\">T</italic>\nC = 319 K), which is much higher than the mobility of Ga1-<italic toggle=\"yes\">x</italic>\nFe\n<italic toggle=\"yes\">x</italic>\nSb at <italic toggle=\"yes\">x</italic> = 25.2% (<italic toggle=\"yes\">µ</italic> = 6.2 cm2/(V∙s)). Our results provide useful information for enhancing the magnetic anisotropy and hole mobility of (Ga,Fe)Sb by using Ni co-doping.","PeriodicalId":17038,"journal":{"name":"Journal of Semiconductors","volume":"72 1","pages":""},"PeriodicalIF":4.8000,"publicationDate":"2024-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga1-x-y Fe x Ni y Sb\",\"authors\":\"Zhi Deng, Hailong Wang, Qiqi Wei, Lei Liu, Hongli Sun, Dong Pan, Dahai Wei, Jianhua Zhao\",\"doi\":\"10.1088/1674-4926/45/1/012101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"(Ga,Fe)Sb is a promising magnetic semiconductor (MS) for spintronic applications because its Curie temperature (<italic toggle=\\\"yes\\\">T</italic>\\nC) is above 300 K when the Fe concentration is higher than 20%. However, the anisotropy constant <italic toggle=\\\"yes\\\">K</italic>\\nu of (Ga,Fe)Sb is below 7.6 × 103 erg/cm3 when Fe concentration is lower than 30%, which is one order of magnitude lower than that of (Ga,Mn)As. To address this issue, we grew Ga1-<italic toggle=\\\"yes\\\">x</italic>-<italic toggle=\\\"yes\\\">y</italic>\\nFe\\n<italic toggle=\\\"yes\\\">x</italic>\\nNi\\n<italic toggle=\\\"yes\\\">y</italic>\\nSb films with almost the same <italic toggle=\\\"yes\\\">x</italic> (≈24%) and different <italic toggle=\\\"yes\\\">y</italic> to characterize their magnetic and electrical transport properties. We found that the magnetic anisotropy of Ga0.76-<italic toggle=\\\"yes\\\">y</italic>\\nFe0.24Ni\\n<italic toggle=\\\"yes\\\">y</italic>\\nSb can be enhanced by increasing <italic toggle=\\\"yes\\\">y</italic>, in which <italic toggle=\\\"yes\\\">K</italic>\\nu is negligible at <italic toggle=\\\"yes\\\">y</italic> = 1.7% but increases to 3.8 × 105 erg/cm3 at <italic toggle=\\\"yes\\\">y</italic> = 6.1% (<italic toggle=\\\"yes\\\">T</italic>\\nC = 354 K). In addition, the hole mobility (<italic toggle=\\\"yes\\\">µ</italic>) of Ga1-<italic toggle=\\\"yes\\\">x</italic>-<italic toggle=\\\"yes\\\">y</italic>\\nFe\\n<italic toggle=\\\"yes\\\">x</italic>\\nNi\\n<italic toggle=\\\"yes\\\">y</italic>\\nSb reaches 31.3 cm2/(V∙s) at <italic toggle=\\\"yes\\\">x</italic> = 23.7%, <italic toggle=\\\"yes\\\">y</italic> = 1.7% (<italic toggle=\\\"yes\\\">T</italic>\\nC = 319 K), which is much higher than the mobility of Ga1-<italic toggle=\\\"yes\\\">x</italic>\\nFe\\n<italic toggle=\\\"yes\\\">x</italic>\\nSb at <italic toggle=\\\"yes\\\">x</italic> = 25.2% (<italic toggle=\\\"yes\\\">µ</italic> = 6.2 cm2/(V∙s)). Our results provide useful information for enhancing the magnetic anisotropy and hole mobility of (Ga,Fe)Sb by using Ni co-doping.\",\"PeriodicalId\":17038,\"journal\":{\"name\":\"Journal of Semiconductors\",\"volume\":\"72 1\",\"pages\":\"\"},\"PeriodicalIF\":4.8000,\"publicationDate\":\"2024-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/1674-4926/45/1/012101\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1674-4926/45/1/012101","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 0

摘要

(Ga,Fe)Sb是一种很有前途的自旋电子应用磁性半导体（MS），因为当铁元素浓度高于20%时，它的居里温度（TC）高于300 K。然而，当铁元素浓度低于 30% 时，(Ga,Fe)Sb 的各向异性常数 Ku 低于 7.6 × 103 erg/cm3，比 (Ga,Mn)As 低一个数量级。为了解决这个问题，我们生长了几乎相同 x（≈24%）和不同 y 的 Ga1-x-yFexNiySb 薄膜，以表征它们的磁性和电传输特性。我们发现，Ga0.76-yFe0.24NiySb 的磁各向异性可随着 y 的增加而增强，其中在 y = 1.7% 时，Ku 可忽略不计，但在 y = 6.1% 时（TC = 354 K），Ku 增加到 3.8 × 105 erg/cm3。此外，Ga1-x-yFexNiySb 的空穴迁移率（µ）在 x = 23.7%、y = 1.7%（TC = 319 K）时达到 31.3 cm2/（V∙s），远高于 Ga1-xFexSb 在 x = 25.2%（µ = 6.2 cm2/（V∙s））时的迁移率。我们的研究结果为通过掺杂镍来提高（Ga,Fe）Sb 的磁各向异性和空穴迁移率提供了有用的信息。

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Enhanced magnetic anisotropy and high hole mobility in magnetic semiconductor Ga1-x-y Fe x Ni y Sb

(Ga,Fe)Sb is a promising magnetic semiconductor (MS) for spintronic applications because its Curie temperature (T _C) is above 300 K when the Fe concentration is higher than 20%. However, the anisotropy constant K _u of (Ga,Fe)Sb is below 7.6 × 10³ erg/cm³ when Fe concentration is lower than 30%, which is one order of magnitude lower than that of (Ga,Mn)As. To address this issue, we grew Ga_1-x-yFe_xNi_ySb films with almost the same x (≈24%) and different y to characterize their magnetic and electrical transport properties. We found that the magnetic anisotropy of Ga_0.76-yFe_0.24Ni_ySb can be enhanced by increasing y, in which K _u is negligible at y = 1.7% but increases to 3.8 × 10⁵ erg/cm³ at y = 6.1% (T _C = 354 K). In addition, the hole mobility (µ) of Ga_1-x-yFe_xNi_ySb reaches 31.3 cm²/(V∙s) at x = 23.7%, y = 1.7% (T _C = 319 K), which is much higher than the mobility of Ga_1-xFe_xSb at x = 25.2% (µ = 6.2 cm²/(V∙s)). Our results provide useful information for enhancing the magnetic anisotropy and hole mobility of (Ga,Fe)Sb by using Ni co-doping.

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