可持续 OTS 材料的第一原理筛选

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-04-01 Epub Date: 2024-02-03 DOI:10.1016/j.sse.2024.108876
S. Clima , D. Matsubayashi , T. Ravsher , D. Garbin , R. Delhougne , G.S. Kar , G. Pourtois
{"title":"可持续 OTS 材料的第一原理筛选","authors":"S. Clima ,&nbsp;D. Matsubayashi ,&nbsp;T. Ravsher ,&nbsp;D. Garbin ,&nbsp;R. Delhougne ,&nbsp;G.S. Kar ,&nbsp;G. Pourtois","doi":"10.1016/j.sse.2024.108876","DOIUrl":null,"url":null,"abstract":"<div><p>Chalcogenides Ovonic Threshold Switching (OTS) chalcogenide materials have suitable electronic properties for two-terminal selector application. To reduce the use of toxic elements, there is a need to replace As and Se of the presently-used OTS materials with environmentally friendly OTS materials. In an effort to accelerate the discovery of such materials, we predicted electrical device parameters only from atomistic first-principles simulations and performed a theoretical screening for alternative OTS compositions. With the help of the identified correlations between the theoretical trap/mobility gaps, the local atomic coordination environments and the experimentally-measured threshold, hold voltages or hold, leakage currents and other physics-based material parameter filters like material stability and OTS gauge, we identified more than 35 promising As/Se-free ternary alloy OTS compositions.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"214 ","pages":"Article 108876"},"PeriodicalIF":1.4000,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"First-principles screening for sustainable OTS materials\",\"authors\":\"S. Clima ,&nbsp;D. Matsubayashi ,&nbsp;T. Ravsher ,&nbsp;D. Garbin ,&nbsp;R. Delhougne ,&nbsp;G.S. Kar ,&nbsp;G. Pourtois\",\"doi\":\"10.1016/j.sse.2024.108876\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Chalcogenides Ovonic Threshold Switching (OTS) chalcogenide materials have suitable electronic properties for two-terminal selector application. To reduce the use of toxic elements, there is a need to replace As and Se of the presently-used OTS materials with environmentally friendly OTS materials. In an effort to accelerate the discovery of such materials, we predicted electrical device parameters only from atomistic first-principles simulations and performed a theoretical screening for alternative OTS compositions. With the help of the identified correlations between the theoretical trap/mobility gaps, the local atomic coordination environments and the experimentally-measured threshold, hold voltages or hold, leakage currents and other physics-based material parameter filters like material stability and OTS gauge, we identified more than 35 promising As/Se-free ternary alloy OTS compositions.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"214 \",\"pages\":\"Article 108876\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S003811012400025X\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2024/2/3 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S003811012400025X","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/2/3 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

Chalcogenides Ovonic Threshold Switching (OTS) Chalcogenide 材料具有适合双端选择器应用的电子特性。为了减少有毒元素的使用,有必要用环保型 OTS 材料取代目前使用的 As 和 Se 材料。为了加快这类材料的发现,我们仅通过原子第一性原理模拟预测了电子器件参数,并对替代 OTS 成分进行了理论筛选。借助已确定的理论阱/迁移率间隙、局部原子配位环境与实验测量的阈值、保持电压或保持、漏电流之间的相关性,以及其他基于物理学的材料参数筛选(如材料稳定性和 OTS 量规),我们确定了超过 35 种有前景的无砷/无硒三元合金 OTS 成分。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
First-principles screening for sustainable OTS materials

Chalcogenides Ovonic Threshold Switching (OTS) chalcogenide materials have suitable electronic properties for two-terminal selector application. To reduce the use of toxic elements, there is a need to replace As and Se of the presently-used OTS materials with environmentally friendly OTS materials. In an effort to accelerate the discovery of such materials, we predicted electrical device parameters only from atomistic first-principles simulations and performed a theoretical screening for alternative OTS compositions. With the help of the identified correlations between the theoretical trap/mobility gaps, the local atomic coordination environments and the experimentally-measured threshold, hold voltages or hold, leakage currents and other physics-based material parameter filters like material stability and OTS gauge, we identified more than 35 promising As/Se-free ternary alloy OTS compositions.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
期刊最新文献
MnFe2O4 nanoparticles for VOCs sensing application at low operating temperature Wire resistance impact and compensation methods in analog switching 1R memristive crossbar arrays Band-edge injection electroluminescence at high temperatures in pn structures based on wide-bandgap semiconductors Wide-range characterization of GaN HEMTs and its associated compact modeling procedure Precise evaluation of silicided source/drain contacts using the bridge-contact resistance method
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1