通过化学气相沉积结合电子束蒸发技术实现晶圆级 PdS 和 PdS2 纳米薄膜的可控生长

IF 4.8 4区 物理与天体物理 Q2 PHYSICS, CONDENSED MATTER Journal of Semiconductors Pub Date : 2023-12-01 DOI:10.1088/1674-4926/44/12/122001
Hui Gao, Hongyi Zhou, Yulong Hao, Guoliang Zhou, Huan Zhou, Fenglin Gao, Jinbiao Xiao, Pinghua Tang, Guolin Hao
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引用次数: 0

摘要

钯(Pd)基硫化物因其独特的性质和在电子和光电领域的潜在应用而引发了广泛的兴趣。然而,合成大规模均匀的 PdS 和 PdS2 纳米薄膜(NFs)仍然是一项巨大的挑战。在这项工作中,通过化学气相沉积结合电子束蒸发技术,可以可控地制备出稳定性极佳的 2 英寸晶圆级 PdS 和 PdS2 纳米薄膜。预沉积 Pd 膜的厚度和硫化温度对 PdS 和 PdS2 NF 的精确合成至关重要。根据实验结果和吉布斯自由能计算,我们提出了相应的生长机制。导电原子力显微镜探索了 PdS 和 PdS2 NFs 的电输运特性。我们的研究结果实现了 PdS 和 PdS2 NFs 的可控生长,这可能为促进基于 PdS 和 PdS2 的下一代高性能光电器件的应用提供了一条途径。
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Controllable growth of wafer-scale PdS and PdS2 nanofilms via chemical vapor deposition combined with an electron beam evaporation technique
Palladium (Pd)-based sulfides have triggered extensive interest due to their unique properties and potential applications in the fields of electronics and optoelectronics. However, the synthesis of large-scale uniform PdS and PdS2 nanofilms (NFs) remains an enormous challenge. In this work, 2-inch wafer-scale PdS and PdS2 NFs with excellent stability can be controllably prepared via chemical vapor deposition combined with electron beam evaporation technique. The thickness of the pre-deposited Pd film and the sulfurization temperature are critical for the precise synthesis of PdS and PdS2 NFs. A corresponding growth mechanism has been proposed based on our experimental results and Gibbs free energy calculations. The electrical transport properties of PdS and PdS2 NFs were explored by conductive atomic force microscopy. Our findings have achieved the controllable growth of PdS and PdS2 NFs, which may provide a pathway to facilitate PdS and PdS2 based applications for next-generation high performance optoelectronic devices.
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来源期刊
Journal of Semiconductors
Journal of Semiconductors PHYSICS, CONDENSED MATTER-
CiteScore
6.70
自引率
9.80%
发文量
119
期刊介绍: Journal of Semiconductors publishes articles that emphasize semiconductor physics, materials, devices, circuits, and related technology.
期刊最新文献
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