83Pb/10Sb/5Sn2Ag 和 91.5Sn/8.5Sb 中间焊料的恒应变速率加罗法洛蠕变行为

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Packaging Pub Date : 2024-02-12 DOI:10.1115/1.4064751
Eric Stang, Cherish Lesko, Henry Young
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引用次数: 0

摘要

现代电子产品可靠性预测模型需要特定材料在各种条件下的失效数据。对于焊料蠕变数据,Garofalo 模型是首选,因为它能在很宽的温度范围内准确预测性能。然而,有关中间焊料的 Garofalo 数据很少,尤其是有关低温性能的数据。在此,我们报告了 83Pb/10Sb/5Sn2Ag (Indalloy 236)和 91.5Sn/8.5Sb (Indalloy 264)的蠕变现象。从-20°C到175°C,Indalloy 236的蠕变活化能为83.6 kJ/mol,n=4.46,a=0.0673;而Indalloy 264的蠕变活化能为57.59 kJ/mol,n=5.89,a=0.0306。X 射线衍射 (XRD)、扫描电子显微镜 (SEM) 和能量色散光谱 (EDS) 被用来描述蠕变引起的合金相变化。微观结构分析表明,Indalloy 236 在高扩散率下发生空洞凝聚,而 Indalloy 264 则在晶界上析出富锑相。
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Constant Strain-Rate Garofalo Creep Behavior of Intermediate 83Pb/10Sb/5Sn2Ag and 91.5Sn/8.5Sb Solder Materials
Modern electronics reliability prediction models require materials-specific failure data across a range of conditions. For solder creep data, Garofalo models are preferred due to their ability to accurately predict performance over a wide temperature range. However, Garofalo data on intermediate solders is sparse, especially regarding performance at cold temperatures. Here, we report on creep phenomena of 83Pb/10Sb/5Sn2Ag (Indalloy 236) and 91.5Sn/8.5Sb (Indalloy 264). Indalloy 236 creep exhibits an activation energy of 83.6 kJ/mol, n=4.46 and a=0.0673, while Indalloy 264 exhibits an activation energy of 57.59 kJ/mol, n=5.89 and a=0.0306 from -20°C to 175°C. X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) were used to characterize the changes in the alloy phases as a result of the creep. Microstructural analysis indicates that Indalloy 236 experiences void coalescence with high diffusion rates while Indalloy 264 precipitates antimony-rich phases on the grain broundaries.
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来源期刊
Journal of Electronic Packaging
Journal of Electronic Packaging 工程技术-工程:电子与电气
CiteScore
4.90
自引率
6.20%
发文量
44
审稿时长
3 months
期刊介绍: The Journal of Electronic Packaging publishes papers that use experimental and theoretical (analytical and computer-aided) methods, approaches, and techniques to address and solve various mechanical, materials, and reliability problems encountered in the analysis, design, manufacturing, testing, and operation of electronic and photonics components, devices, and systems. Scope: Microsystems packaging; Systems integration; Flexible electronics; Materials with nano structures and in general small scale systems.
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