{"title":"利用内腔工程缩小垂直腔表面发射激光器线宽","authors":"Zhiting Tang;Chuanlin Li;Feiyun Zhao;Jilin Liu;Aobo Ren;Hongxing Xu;Jiang Wu","doi":"10.1109/JQE.2024.3362276","DOIUrl":null,"url":null,"abstract":"Vertical-cavity surface-emitting lasers (VCSELs), featuring the advantages of low energy consumption, miniaturization, and high-beam quality, show potential for various applications from atomic clock to light detection and ranging (LiDAR). A high-performance atomic clock system requires laser linewidths below 10 MHz to ensure compatibility with the natural atomic linewidth (e.g., 5 MHz for cesium). However, the current prevalent method for reducing VCSEL linewidths relies on external cavities, which adds complexity and cost to the devices and hampers seamless integration into atomic clock systems. While narrow-linewidth VCSELs have been successfully demonstrated using extended cavities, there remains a need for a comprehensive and systematic study on the underlying design principles and optimization strategies. Here, we propose a VCSEL linewidth narrowing strategy enabled by internal-cavity engineering for cesium atomic clock applications. We investigate strategies to narrow the cold cavity linewidth without introducing additional optical round-trip loss. We provide a general approach to constructing the extended cavity (EC) and showcase the ability of manipulating the phase of light. To optimize the electrical properties, we explore variations in the extended layer thickness based on a monolithic VCSEL structure. We proposed an EC-VCSEL configuration with a theoretical laser spectral linewidth of approximately 1.7 MHz and a calculated output power of about 3 mW. Through exploiting gain-cavity offset, the EC-VCSEL exhibits a stable emission (894.6 nm) and a high gain of cavity mode (\n<inline-formula> <tex-math>$\\sim $ </tex-math></inline-formula>\n4000 cm\n<inline-formula> <tex-math>$^{-1}$ </tex-math></inline-formula>\n) at high-temperature (e.g., 360 K). This work may serve as a reference for the realization of narrow-linewidth VCSELs, offering potential benefits in reducing device complexity and facilitating the system integration.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":"60 2","pages":"1-8"},"PeriodicalIF":2.2000,"publicationDate":"2024-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Vertical-Cavity Surface-Emitting Laser Linewidth Narrowing Enabled by Internal-Cavity Engineering\",\"authors\":\"Zhiting Tang;Chuanlin Li;Feiyun Zhao;Jilin Liu;Aobo Ren;Hongxing Xu;Jiang Wu\",\"doi\":\"10.1109/JQE.2024.3362276\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vertical-cavity surface-emitting lasers (VCSELs), featuring the advantages of low energy consumption, miniaturization, and high-beam quality, show potential for various applications from atomic clock to light detection and ranging (LiDAR). A high-performance atomic clock system requires laser linewidths below 10 MHz to ensure compatibility with the natural atomic linewidth (e.g., 5 MHz for cesium). However, the current prevalent method for reducing VCSEL linewidths relies on external cavities, which adds complexity and cost to the devices and hampers seamless integration into atomic clock systems. While narrow-linewidth VCSELs have been successfully demonstrated using extended cavities, there remains a need for a comprehensive and systematic study on the underlying design principles and optimization strategies. Here, we propose a VCSEL linewidth narrowing strategy enabled by internal-cavity engineering for cesium atomic clock applications. We investigate strategies to narrow the cold cavity linewidth without introducing additional optical round-trip loss. We provide a general approach to constructing the extended cavity (EC) and showcase the ability of manipulating the phase of light. To optimize the electrical properties, we explore variations in the extended layer thickness based on a monolithic VCSEL structure. We proposed an EC-VCSEL configuration with a theoretical laser spectral linewidth of approximately 1.7 MHz and a calculated output power of about 3 mW. Through exploiting gain-cavity offset, the EC-VCSEL exhibits a stable emission (894.6 nm) and a high gain of cavity mode (\\n<inline-formula> <tex-math>$\\\\sim $ </tex-math></inline-formula>\\n4000 cm\\n<inline-formula> <tex-math>$^{-1}$ </tex-math></inline-formula>\\n) at high-temperature (e.g., 360 K). This work may serve as a reference for the realization of narrow-linewidth VCSELs, offering potential benefits in reducing device complexity and facilitating the system integration.\",\"PeriodicalId\":13200,\"journal\":{\"name\":\"IEEE Journal of Quantum Electronics\",\"volume\":\"60 2\",\"pages\":\"1-8\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-02-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10419331/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10419331/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Vertical-Cavity Surface-Emitting Laser Linewidth Narrowing Enabled by Internal-Cavity Engineering
Vertical-cavity surface-emitting lasers (VCSELs), featuring the advantages of low energy consumption, miniaturization, and high-beam quality, show potential for various applications from atomic clock to light detection and ranging (LiDAR). A high-performance atomic clock system requires laser linewidths below 10 MHz to ensure compatibility with the natural atomic linewidth (e.g., 5 MHz for cesium). However, the current prevalent method for reducing VCSEL linewidths relies on external cavities, which adds complexity and cost to the devices and hampers seamless integration into atomic clock systems. While narrow-linewidth VCSELs have been successfully demonstrated using extended cavities, there remains a need for a comprehensive and systematic study on the underlying design principles and optimization strategies. Here, we propose a VCSEL linewidth narrowing strategy enabled by internal-cavity engineering for cesium atomic clock applications. We investigate strategies to narrow the cold cavity linewidth without introducing additional optical round-trip loss. We provide a general approach to constructing the extended cavity (EC) and showcase the ability of manipulating the phase of light. To optimize the electrical properties, we explore variations in the extended layer thickness based on a monolithic VCSEL structure. We proposed an EC-VCSEL configuration with a theoretical laser spectral linewidth of approximately 1.7 MHz and a calculated output power of about 3 mW. Through exploiting gain-cavity offset, the EC-VCSEL exhibits a stable emission (894.6 nm) and a high gain of cavity mode (
$\sim $
4000 cm
$^{-1}$
) at high-temperature (e.g., 360 K). This work may serve as a reference for the realization of narrow-linewidth VCSELs, offering potential benefits in reducing device complexity and facilitating the system integration.
期刊介绍:
The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.