{"title":"分级氮化镓缓冲层厚度对氮化镓沟道 HEMT 的直流、射频、线性度、互调和非态击穿特性的影响","authors":"Anupama Anand, Rakhi Narang, Dipendra Singh Rawal, Meena Mishra, Manoj Saxena, Mridula Gupta","doi":"10.1080/02564602.2024.2315628","DOIUrl":null,"url":null,"abstract":"This study examines the extraction of small-signal equivalent circuit parameters, linearity and intermodulation metrics, and capacitance–voltage characteristics for both AlGaN and GaN channel HEMTs...","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"17 1","pages":""},"PeriodicalIF":2.5000,"publicationDate":"2024-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of Graded AlGaN Buffer Layer Thickness on the DC, RF, Linearity, Intermodulation and Off-State Breakdown Characteristics of AlGaN Channel HEMT\",\"authors\":\"Anupama Anand, Rakhi Narang, Dipendra Singh Rawal, Meena Mishra, Manoj Saxena, Mridula Gupta\",\"doi\":\"10.1080/02564602.2024.2315628\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study examines the extraction of small-signal equivalent circuit parameters, linearity and intermodulation metrics, and capacitance–voltage characteristics for both AlGaN and GaN channel HEMTs...\",\"PeriodicalId\":13252,\"journal\":{\"name\":\"IETE Technical Review\",\"volume\":\"17 1\",\"pages\":\"\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2024-02-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IETE Technical Review\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://doi.org/10.1080/02564602.2024.2315628\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IETE Technical Review","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1080/02564602.2024.2315628","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
本研究探讨了如何提取 AlGaN 和 GaN 沟道 HEMT 的小信号等效电路参数、线性度和互调指标以及电容-电压特性。
Impact of Graded AlGaN Buffer Layer Thickness on the DC, RF, Linearity, Intermodulation and Off-State Breakdown Characteristics of AlGaN Channel HEMT
This study examines the extraction of small-signal equivalent circuit parameters, linearity and intermodulation metrics, and capacitance–voltage characteristics for both AlGaN and GaN channel HEMTs...
期刊介绍：
IETE Technical Review is a world leading journal which publishes state-of-the-art review papers and in-depth tutorial papers on current and futuristic technologies in the area of electronics and telecommunications engineering. We also publish original research papers which demonstrate significant advances.
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