高强度亚皮秒电场诱导的硅表面层电离

IF 1.8 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Infrared, Millimeter, and Terahertz Waves Pub Date : 2024-02-28 DOI:10.1007/s10762-024-00976-z

{"title":"高强度亚皮秒电场诱导的硅表面层电离","authors":"","doi":"10.1007/s10762-024-00976-z","DOIUrl":null,"url":null,"abstract":"<h3>Abstract</h3> The ionization of a silicon surface layer induced by an electric field with a strength of up to 17 MV/cm and a rise time of \\(\\approx \\) 245 fs has been studied for the first time. The generation rate of free carriers induced by electric field has been experimentally determined. It has been shown that the average concentration of electrons in the conduction band in surface layer reaches \\(\\sim 3\\times 10^{19}\\) cm \\(^{-3}\\) , which corresponds to the ionization rate of \\(1.4\\times 10^{14}\\) s \\(^{-1}\\) . A new method is proposed for synchronizing the THz pulse temporal profile measured by electro-optical sampling with the results of pump-probe measurements based on second harmonic generation.","PeriodicalId":16181,"journal":{"name":"Journal of Infrared, Millimeter, and Terahertz Waves","volume":null,"pages":null},"PeriodicalIF":1.8000,"publicationDate":"2024-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ionization of a Silicon Surface Layer Induced by a High-Intensity Subpicosecond Electric Field\",\"authors\":\"\",\"doi\":\"10.1007/s10762-024-00976-z\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3>Abstract</h3> The ionization of a silicon surface layer induced by an electric field with a strength of up to 17 MV/cm and a rise time of \\\\(\\\\approx \\\\) 245 fs has been studied for the first time. The generation rate of free carriers induced by electric field has been experimentally determined. It has been shown that the average concentration of electrons in the conduction band in surface layer reaches \\\\(\\\\sim 3\\\\times 10^{19}\\\\) cm \\\\(^{-3}\\\\) , which corresponds to the ionization rate of \\\\(1.4\\\\times 10^{14}\\\\) s \\\\(^{-1}\\\\) . A new method is proposed for synchronizing the THz pulse temporal profile measured by electro-optical sampling with the results of pump-probe measurements based on second harmonic generation.\",\"PeriodicalId\":16181,\"journal\":{\"name\":\"Journal of Infrared, Millimeter, and Terahertz Waves\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.8000,\"publicationDate\":\"2024-02-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Infrared, Millimeter, and Terahertz Waves\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s10762-024-00976-z\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Infrared, Millimeter, and Terahertz Waves","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s10762-024-00976-z","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

摘要首次研究了在强度高达 17 MV/cm 和上升时间为 245 fs 的电场诱导下硅表面层的电离。实验测定了电场诱导的自由载流子的产生率。实验表明，表层导带中电子的平均浓度达到了 3 倍 10^{19} cm （^{-3}\），这相当于 1.4 倍 10^{14} s （^{-1}\）的电离率。我们提出了一种新方法，用于将电光采样测量到的太赫兹脉冲时间轮廓与基于二次谐波产生的泵探测量结果同步。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Ionization of a Silicon Surface Layer Induced by a High-Intensity Subpicosecond Electric Field

Abstract

The ionization of a silicon surface layer induced by an electric field with a strength of up to 17 MV/cm and a rise time of \(\approx \) 245 fs has been studied for the first time. The generation rate of free carriers induced by electric field has been experimentally determined. It has been shown that the average concentration of electrons in the conduction band in surface layer reaches \(\sim 3\times 10^{19}\) cm \(^{-3}\) , which corresponds to the ionization rate of \(1.4\times 10^{14}\) s \(^{-1}\) . A new method is proposed for synchronizing the THz pulse temporal profile measured by electro-optical sampling with the results of pump-probe measurements based on second harmonic generation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Journal of Infrared, Millimeter, and Terahertz Waves 工程技术-工程：电子与电气

CiteScore

6.20

自引率

6.90%

发文量

审稿时长

3 months

期刊介绍： The Journal of Infrared, Millimeter, and Terahertz Waves offers a peer-reviewed platform for the rapid dissemination of original, high-quality research in the frequency window from 30 GHz to 30 THz. The topics covered include: sources, detectors, and other devices; systems, spectroscopy, sensing, interaction between electromagnetic waves and matter, applications, metrology, and communications. Purely numerical work, especially with commercial software packages, will be published only in very exceptional cases. The same applies to manuscripts describing only algorithms (e.g. pattern recognition algorithms). Manuscripts submitted to the Journal should discuss a significant advancement to the field of infrared, millimeter, and terahertz waves.