先进封装中不同冲击角度下微凸块互连器件滴落寿命的失效机理和预测模型

IF 2.5 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Device and Materials Reliability Pub Date : 2024-02-27 DOI:10.1109/TDMR.2024.3370631
Yangtao Long;Mingtao Lv;Hu He
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引用次数: 0

摘要

随着摩尔定律的发展,由于焊点尺寸的缩小,焊点的抗冲击可靠性已成为一个重要问题。研究人员广泛采用基于 JEDEC 标准的板级跌落测试来评估电子封装的冲击性能。通常,这些测试是在电路板水平放置的情况下进行的。然而,现实世界的使用环境涉及不同角度的冲击,可能导致焊点出现不同的失效机制。在本研究中,我们研究了微凸块互连结构在不同冲击角度下的冲击可靠性。通过考虑塑性应变分析,我们证明了其他角度的跌落冲击可以等同于跌落角 $\alpha =$ 0° 冲击的情况。随后,我们分析了微凸块在跌落试验中的失效机理,并提出了不同撞击角度下微凸块跌落寿命的预测模型。结果表明,随着下落角度的增大,微凸块失效的驱动力从拉应力和压应力转变为剪应力。所提出的寿命预测模型的误差率低于 25%,能有效预测先进封装中微凸块的跌落寿命。
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Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging
With the advancement of Moore’s Law, the impact reliability of solder joints has emerged as a critical concern due to the reduction in their size. The board-level drop test, based on the JEDEC standard, is widely employed by researchers to assess the impact performance of electronic packages. Typically, these tests are conducted with boards placed horizontally. However, real-world service environments involve impacts at various angles that can lead to different failure mechanisms in solder joints. In this study, we investigate the impact reliability of microbump interconnect structures under different impact angles. By considering plastic strain analysis, we demonstrate that drop impacts at other angles can be equivalently represented by the scenario with drop angle $\alpha =$ 0° impact. Subsequently, we analyze the failure mechanism of microbumps during drop tests and propose a predictive model for their drop life under varying impact angles. Our results indicate that as the drop angle increases, there is a transition in the driving force for microbump failures from tensile and compressive stress to shear stress. The proposed life prediction model exhibits an error rate below 25% and effectively forecasts the drop life of microbumps in advanced packaging.
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来源期刊
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability 工程技术-工程:电子与电气
CiteScore
4.80
自引率
5.00%
发文量
71
审稿时长
6-12 weeks
期刊介绍: The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
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