{"title":"先进封装中不同冲击角度下微凸块互连器件滴落寿命的失效机理和预测模型","authors":"Yangtao Long;Mingtao Lv;Hu He","doi":"10.1109/TDMR.2024.3370631","DOIUrl":null,"url":null,"abstract":"With the advancement of Moore’s Law, the impact reliability of solder joints has emerged as a critical concern due to the reduction in their size. The board-level drop test, based on the JEDEC standard, is widely employed by researchers to assess the impact performance of electronic packages. Typically, these tests are conducted with boards placed horizontally. However, real-world service environments involve impacts at various angles that can lead to different failure mechanisms in solder joints. In this study, we investigate the impact reliability of microbump interconnect structures under different impact angles. By considering plastic strain analysis, we demonstrate that drop impacts at other angles can be equivalently represented by the scenario with drop angle \n<inline-formula> <tex-math>$\\alpha =$ </tex-math></inline-formula>\n 0° impact. Subsequently, we analyze the failure mechanism of microbumps during drop tests and propose a predictive model for their drop life under varying impact angles. Our results indicate that as the drop angle increases, there is a transition in the driving force for microbump failures from tensile and compressive stress to shear stress. The proposed life prediction model exhibits an error rate below 25% and effectively forecasts the drop life of microbumps in advanced packaging.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 2","pages":"241-249"},"PeriodicalIF":2.5000,"publicationDate":"2024-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging\",\"authors\":\"Yangtao Long;Mingtao Lv;Hu He\",\"doi\":\"10.1109/TDMR.2024.3370631\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"With the advancement of Moore’s Law, the impact reliability of solder joints has emerged as a critical concern due to the reduction in their size. The board-level drop test, based on the JEDEC standard, is widely employed by researchers to assess the impact performance of electronic packages. Typically, these tests are conducted with boards placed horizontally. However, real-world service environments involve impacts at various angles that can lead to different failure mechanisms in solder joints. In this study, we investigate the impact reliability of microbump interconnect structures under different impact angles. By considering plastic strain analysis, we demonstrate that drop impacts at other angles can be equivalently represented by the scenario with drop angle \\n<inline-formula> <tex-math>$\\\\alpha =$ </tex-math></inline-formula>\\n 0° impact. Subsequently, we analyze the failure mechanism of microbumps during drop tests and propose a predictive model for their drop life under varying impact angles. Our results indicate that as the drop angle increases, there is a transition in the driving force for microbump failures from tensile and compressive stress to shear stress. The proposed life prediction model exhibits an error rate below 25% and effectively forecasts the drop life of microbumps in advanced packaging.\",\"PeriodicalId\":448,\"journal\":{\"name\":\"IEEE Transactions on Device and Materials Reliability\",\"volume\":\"24 2\",\"pages\":\"241-249\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2024-02-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Device and Materials Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10445702/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10445702/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Failure Mechanism and Predictive Modeling for Microbump Interconnects Drop Life Under Diverse Impact Angles in Advanced Packaging
With the advancement of Moore’s Law, the impact reliability of solder joints has emerged as a critical concern due to the reduction in their size. The board-level drop test, based on the JEDEC standard, is widely employed by researchers to assess the impact performance of electronic packages. Typically, these tests are conducted with boards placed horizontally. However, real-world service environments involve impacts at various angles that can lead to different failure mechanisms in solder joints. In this study, we investigate the impact reliability of microbump interconnect structures under different impact angles. By considering plastic strain analysis, we demonstrate that drop impacts at other angles can be equivalently represented by the scenario with drop angle
$\alpha =$
0° impact. Subsequently, we analyze the failure mechanism of microbumps during drop tests and propose a predictive model for their drop life under varying impact angles. Our results indicate that as the drop angle increases, there is a transition in the driving force for microbump failures from tensile and compressive stress to shear stress. The proposed life prediction model exhibits an error rate below 25% and effectively forecasts the drop life of microbumps in advanced packaging.
期刊介绍:
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.