通过溅射法制造用于固态电池的石榴石固体电解质

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-02-24 DOI:10.1016/j.sse.2024.108894
Shu-Yi Tsai , Kuan-Zong Fung
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引用次数: 0

摘要

本研究采用射频磁控溅射技术,成功地在氧化镁基底上沉积了 LiLaZrO(LLZO)薄膜。沉积过程在不同的基底温度下进行,以研究它们对薄膜特性的影响。沉积薄膜最初是无定形的,但当沉积温度升至 100 °C 以上时,它们可以结晶成立方相。当沉积温度升高到 200 ℃ 时,X 射线衍射图谱中的峰值变得更加尖锐和强烈,表明 LLZO 的体积分数和结晶尺寸增大。在 300 ℃ 下沉积的薄膜显示出第二相,即 LaZrO 相,这是因为锂损耗过多所致。这些发现凸显了控制沉积温度对获得理想晶相和优化 LLZO 薄膜电学特性的重要性。
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Fabrication of garnet solid electrolytes via sputtering for solid-state batteries

In this study, the deposition of Li7La3Zr2O12 (LLZO) thin films onto MgO substrates was successfully achieved using the radio frequency magnetron sputtering technique. The deposition process was carried out at various substrate temperatures to investigate their influence on the film properties The as-deposited films were initially amorphous; however, they could be crystallized into the cubic phase by increasing the deposition temperature above 100 °C. Upon raising the deposition temperature to 200 °C, the peaks in the X-ray diffraction pattern became sharper and more intense, indicating an increase in the volume fraction and crystallite size of LLZO. At 200 °C, the film consisted predominantly of the conductive crystalline LLZO phase, resulting in a remarkably high ionic conductivity of about 10−4 S cm−1. The film deposited at 300 °C exhibited the second phase, i.e., the La2Zr2O7 phase, which resulted from excessive lithium losses. These findings highlight the importance of controlling the deposition temperature to achieve the desired crystalline phase and optimize the electrical properties of LLZO thin films.

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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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