{"title":"通过溅射法制造用于固态电池的石榴石固体电解质","authors":"Shu-Yi Tsai , Kuan-Zong Fung","doi":"10.1016/j.sse.2024.108894","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, the deposition of Li<sub>7</sub>La<sub>3</sub>Zr<sub>2</sub>O<sub>12</sub> (LLZO) thin films onto MgO substrates was successfully achieved using the radio frequency magnetron sputtering technique. The deposition process was carried out at various substrate temperatures to investigate their influence on the film properties The as-deposited films were initially amorphous; however, they could be crystallized into the cubic phase by increasing the deposition temperature above 100 °C. Upon raising the deposition temperature to 200 °C, the peaks in the X-ray diffraction pattern became sharper and more intense, indicating an increase in the volume fraction and crystallite size of LLZO.<!--> <!-->At 200 °C, the film consisted predominantly of the conductive crystalline LLZO phase, resulting in a remarkably high ionic conductivity of about 10<sup>−4</sup> <!-->S cm<sup>−1</sup>. The film deposited at 300 °C exhibited the second phase, i.e., the La<sub>2</sub>Zr<sub>2</sub>O<sub>7</sub> phase, which resulted from excessive lithium losses. These findings highlight the importance of controlling the deposition temperature to achieve the desired crystalline phase and optimize the electrical properties of LLZO thin films.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"215 ","pages":"Article 108894"},"PeriodicalIF":1.4000,"publicationDate":"2024-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication of garnet solid electrolytes via sputtering for solid-state batteries\",\"authors\":\"Shu-Yi Tsai , Kuan-Zong Fung\",\"doi\":\"10.1016/j.sse.2024.108894\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study, the deposition of Li<sub>7</sub>La<sub>3</sub>Zr<sub>2</sub>O<sub>12</sub> (LLZO) thin films onto MgO substrates was successfully achieved using the radio frequency magnetron sputtering technique. The deposition process was carried out at various substrate temperatures to investigate their influence on the film properties The as-deposited films were initially amorphous; however, they could be crystallized into the cubic phase by increasing the deposition temperature above 100 °C. Upon raising the deposition temperature to 200 °C, the peaks in the X-ray diffraction pattern became sharper and more intense, indicating an increase in the volume fraction and crystallite size of LLZO.<!--> <!-->At 200 °C, the film consisted predominantly of the conductive crystalline LLZO phase, resulting in a remarkably high ionic conductivity of about 10<sup>−4</sup> <!-->S cm<sup>−1</sup>. The film deposited at 300 °C exhibited the second phase, i.e., the La<sub>2</sub>Zr<sub>2</sub>O<sub>7</sub> phase, which resulted from excessive lithium losses. These findings highlight the importance of controlling the deposition temperature to achieve the desired crystalline phase and optimize the electrical properties of LLZO thin films.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"215 \",\"pages\":\"Article 108894\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-02-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124000431\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000431","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Fabrication of garnet solid electrolytes via sputtering for solid-state batteries
In this study, the deposition of Li7La3Zr2O12 (LLZO) thin films onto MgO substrates was successfully achieved using the radio frequency magnetron sputtering technique. The deposition process was carried out at various substrate temperatures to investigate their influence on the film properties The as-deposited films were initially amorphous; however, they could be crystallized into the cubic phase by increasing the deposition temperature above 100 °C. Upon raising the deposition temperature to 200 °C, the peaks in the X-ray diffraction pattern became sharper and more intense, indicating an increase in the volume fraction and crystallite size of LLZO. At 200 °C, the film consisted predominantly of the conductive crystalline LLZO phase, resulting in a remarkably high ionic conductivity of about 10−4 S cm−1. The film deposited at 300 °C exhibited the second phase, i.e., the La2Zr2O7 phase, which resulted from excessive lithium losses. These findings highlight the importance of controlling the deposition temperature to achieve the desired crystalline phase and optimize the electrical properties of LLZO thin films.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.