快速热退火对 GaAsN/GaAs 中氮原子分布的影响

IF 0.6 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-03-15 DOI:10.1134/s1063782623090105

A. A. Lazarenko, K. Yu. Shubina, E. V. Nikitina, E. V. Pirogov, A. M. Mizerov, M. S. Sobolev

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引用次数: 0

摘要

摘要本文研究了 GaAs1-xNx/GaAs 三元固溶体快速热退火对氮原子在晶格中分布的影响。文章通过光致发光光谱和高分辨率 X 射线衍射仪对样品进行了研究。由于氮原子和砷原子的尺寸和电负性不匹配，氮不均匀地融入砷化镓晶格中。图中显示了快速热退火前后氮原子在砷化镓晶格中的排列选项。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs

Abstract

The article investigates the effect of rapid thermal annealing of ternary GaAs_1–xN_x/GaAs solid solutions on the distribution of nitrogen atoms in the crystal lattice. The samples are studied by photoluminescence spectroscopy and high-resolution X-ray diffractometry. Due to the size and electronegativity mismatch of nitrogen and arsenic atoms, nitrogen is incorporated unevenly into the GaAs crystal lattice. Options of the nitrogen atoms arrangement in the GaAs crystal lattice before and after rapid thermal annealing are shown.

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来源期刊

Semiconductors 物理-物理：凝聚态物理

CiteScore

1.50

自引率

28.60%

发文量

131

审稿时长

3-6 weeks

期刊介绍： Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.