Mechanisms of Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures (x = 0.56–1)

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-09-17 DOI:10.1134/s1063782624050026
P. A. Bokhan, K. S. Zhuravlev, D. E. Zakrevsky, T. V. Malin, N. V. Fateev
{"title":"Mechanisms of Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures (x = 0.56–1)","authors":"P. A. Bokhan, K. S. Zhuravlev, D. E. Zakrevsky, T. V. Malin, N. V. Fateev","doi":"10.1134/s1063782624050026","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The optical gain parameters in the six heavily doped Al<sub><i>x</i></sub>Ga<sub>1 – <i>x</i></sub>N:Si structures with <i>x</i> = 0.56, 0.62, 0.65, 0.68, 0.74, were experimentally studied at room temperature. Under optical excitation by pulsed radiation with λ = 266 nm, the mechanisms of stimulated emission of radiative recombination of nonequilibrium charge carriers, leading to the appearance of broadband radiation in the wide range (350–650 nm) of the spectrum with a high luminescence quantum yield are studied. High optical gain (&gt;10<sup>3</sup> cm<sup>–1</sup>) are realized due to the good optical quality of the structures, large donor-acceptor recombination cross sections (~10<sup>–15</sup> cm<sup>2</sup>) and the high density (up to 10<sup>20</sup> cm<sup>–3</sup>) of radiative recombination centers.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624050026","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

Abstract

The optical gain parameters in the six heavily doped AlxGa1 – xN:Si structures with x = 0.56, 0.62, 0.65, 0.68, 0.74, were experimentally studied at room temperature. Under optical excitation by pulsed radiation with λ = 266 nm, the mechanisms of stimulated emission of radiative recombination of nonequilibrium charge carriers, leading to the appearance of broadband radiation in the wide range (350–650 nm) of the spectrum with a high luminescence quantum yield are studied. High optical gain (>103 cm–1) are realized due to the good optical quality of the structures, large donor-acceptor recombination cross sections (~10–15 cm2) and the high density (up to 1020 cm–3) of radiative recombination centers.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
重掺杂 AlxGa1 - xN:Si 结构(x = 0.56-1 )中的光增益机制
摘要 在室温下实验研究了六种重掺杂AlxGa1 - xN:Si结构(x = 0.56、0.62、0.65、0.68、0.74)的光学增益参数。在 λ = 266 nm 脉冲辐射的光激发下,研究了非平衡电荷载流子辐射重组的受激发射机制,这导致在光谱的宽范围(350-650 nm)内出现宽带辐射,并具有很高的发光量子产率。由于结构的光学质量好、供体-受体重组截面大(约 10-15 cm2)以及辐射重组中心密度高(高达 1020 cm-3),实现了高光学增益(103 cm-1)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
期刊最新文献
Luminescence in p–i–n Structures with Compensated Quantum Wells Structure and Self-Modulation Features of the Superradiant States in Asymmetric Fabry–Perot Cavity Mechanisms of Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures (x = 0.56–1) Spatial Inhomogeneity of Impact-Ionization Switching Process in Power Si Diode Effect of Electric Field on Excitons in a Quantum Well under Additional Optical Excitation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1