Semiconductors最新文献

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Effect of Electric Field on Excitons in a Quantum Well under Additional Optical Excitation 附加光激发下电场对量子阱中激子的影响

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050038

M. A. Chukeev, E. S. Khramtsov, Shiming Zheng, I. V. Ignatiev, S. A. Eliseev, Yu. P. Efimov

Abstract

Reflection spectra of a heterostructure with a GaAs/AlGaAs quantum well (QW) of 30 nm wide have been studied under additional optical excitation in an external electric field. The influence of the electric field on all parameters of light-hole and heavy-hole exciton resonances, was studied upon selective excitation of various optical transitions. The effect of compensating for the Stark shift upon excitation to the ground exciton state of the QW is found. A sharp increase in the Stark shift of excitons in QW was found upon optical creation of charge carriers in the GaAs buffer layer. A microscopic calculation of exciton states in various electric fields has been performed. A comparison of the calculated and measured Stark shift of the heavy-hole exciton is used to obtain the dependence of the electric field strength in the QW on the applied voltage.

摘要在外加电场的额外光激发下，研究了具有 30 nm 宽 GaAs/AlGaAs 量子阱 (QW) 的异质结构的反射光谱。在选择性激发各种光学跃迁时，研究了电场对光-空穴和重-空穴激子共振所有参数的影响。研究发现，在激发到 QW 的地激子态时，对斯塔克偏移进行补偿会产生影响。在 GaAs 缓冲层中光学产生电荷载流子时，发现 QW 中激子的斯塔克偏移急剧增加。我们对各种电场下的激子态进行了微观计算。通过比较重空穴激子的斯塔克偏移计算值和测量值，得出了 QW 中的电场强度与外加电压的关系。

引用次数: 0

Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures 碲镉汞梯度带隙异质结构的光调节光学光谱学

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050087

O. S. Komkov, M. V. Yakushev

Abstract—

Multilayer mercury–cadmium–telluride photodetecting heterostructures grown by molecular beam epitaxy on Si and GaAs substrates were studied using the infrared photoreflectance method. Based on the period of Franz–Keldysh oscillations observed in the photoreflectance spectra, the strength of the built-in electric field near the “working layer—graded band gap near-surface layer” heterointerface was determined in a contactless way. An analytical calculation of distribution of such field over the structure depth has specified the region in which the photomodulation signal is formed. The experimentally obtained field values turned out to be higher than the calculated ones, which is explained by the influence of the photovoltaic effect.

摘要利用红外光反射法研究了在硅和砷化镓衬底上通过分子束外延生长的多层汞-镉-碲化镉光探测异质结构。根据光反射光谱中观察到的弗朗兹-凯尔迪什振荡周期，以非接触方式确定了 "工作层-分级带隙近表面层 "异质界面附近的内置电场强度。通过对这种电场在结构深度上的分布进行分析计算，确定了形成光调制信号的区域。实验得出的场值高于计算得出的场值，其原因在于光生伏打效应的影响。

引用次数: 0

Effect of Adsorbed Macromolecule on the Carriers Mobility in Single Layer Graphene: Dangling Bonds Model 吸附大分子对单层石墨烯中载流子迁移率的影响：悬挂键模型

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s106378262405004x

S. Yu. Davydov, A. A. Lebedev

Abstract

Within the framework of the previously proposed model (S.Yu. Davydov. Phys. Solid State 64, 2018 (2022)), in which the interaction of a macromolecule (MM) with single-layer graphene (SLG) is carried out by stitching of dangling MM bonds with carbon atoms, the effect of these stitching on the mobility of carriers in graphene was studied. It is shown that short-range scattering of MM-SLG stitching prevails over Coulomb scattering. It has also been found that the effect of induced by stitching graphene deformation on mobility can be neglected compared to short-range scattering. The cases of free and epitaxial graphene are considered. The use of the MM-SLG-substrate structure as the basis of a biosensor is discussed.

AbstractWithin the framework of the previously proposed model (S.Yu. Davydov.Davydov.Phys. Solid State 64, 2018 (2022)）的框架下，研究了大分子（MM）与单层石墨烯（SLG）之间的相互作用是通过悬挂的 MM 键与碳原子的缝合来实现的，研究了这些缝合对石墨烯中载流子迁移率的影响。研究表明，MM-SLG 拼接的短程散射比库仑散射占优势。研究还发现，与短程散射相比，缝合石墨烯变形对迁移率的影响可以忽略不计。研究考虑了自由石墨烯和外延石墨烯的情况。讨论了如何将 MM-SLG 衬底结构用作生物传感器的基础。

引用次数: 0

Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes 质子和电子辐照对氮化镓肖特基二极管参数的影响

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050105

A. A. Lebedev, A. V. Sakharov, V. V. Kozlovski, D. A. Malevsky, A. E. Nikolaev, M. E. Levinshtein

Abstract

The carrier removal rates during proton and electron irradiations of n-type GaN grown by metal-organic vapor phase epitaxy were determined. Irradiation was carried out with protons with energy of 15 MeV in the fluence range 0 ≤ Ф_р ≤ 5 × 10¹⁴ cm^–2; the range of fluences when irradiated with electrons with energy of 0.9 MeV was 0 ≤ Ф_n ≤ 5 × 10¹⁶ cm^–2. The value of the removal rate during proton irradiation, η_p ≈ 140 cm^–1, is close to the lower limit of currently known values of η_p and indicates a sufficiently high level of radiation resistance of the studied material with respect to proton irradiation. The rate of carrier removal under the influence of electron irradiation, η_e is ≈0.47 cm^–1 and corresponds to the typical values of η_e for type gallium nitride obtained by various methods.

摘要测定了通过金属有机物气相外延生长的 n 型氮化镓在质子和电子辐照过程中的载流子去除率。用能量为 15 MeV 的质子辐照时，辐照流范围为 0 ≤ Фр ≤ 5 × 1014 cm-2；用能量为 0.9 MeV 的电子辐照时，辐照流范围为 0 ≤ Фn ≤ 5 × 1016 cm-2。质子辐照时的去除率ηp ≈ 140 cm-1，接近目前已知的ηp值的下限，表明所研究材料对质子辐照具有足够高的抗辐射能力。在电子辐照影响下的载流子去除率 ηe ≈0.47 cm-1，与通过各种方法获得的氮化镓类型的 ηe 典型值一致。

引用次数: 0

Mechanisms of Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures (x = 0.56–1) 重掺杂 AlxGa1 - xN:Si 结构（x = 0.56-1 ）中的光增益机制

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050026

P. A. Bokhan, K. S. Zhuravlev, D. E. Zakrevsky, T. V. Malin, N. V. Fateev

Abstract

The optical gain parameters in the six heavily doped Al_xGa_{1 – x}N:Si structures with x = 0.56, 0.62, 0.65, 0.68, 0.74, were experimentally studied at room temperature. Under optical excitation by pulsed radiation with λ = 266 nm, the mechanisms of stimulated emission of radiative recombination of nonequilibrium charge carriers, leading to the appearance of broadband radiation in the wide range (350–650 nm) of the spectrum with a high luminescence quantum yield are studied. High optical gain (>10³ cm^–1) are realized due to the good optical quality of the structures, large donor-acceptor recombination cross sections (~10^–15 cm²) and the high density (up to 10²⁰ cm^–3) of radiative recombination centers.

摘要在室温下实验研究了六种重掺杂AlxGa1 - xN:Si结构（x = 0.56、0.62、0.65、0.68、0.74）的光学增益参数。在 λ = 266 nm 脉冲辐射的光激发下，研究了非平衡电荷载流子辐射重组的受激发射机制，这导致在光谱的宽范围（350-650 nm）内出现宽带辐射，并具有很高的发光量子产率。由于结构的光学质量好、供体-受体重组截面大（约 10-15 cm2）以及辐射重组中心密度高（高达 1020 cm-3），实现了高光学增益（103 cm-1）。

引用次数: 0

Structure and Self-Modulation Features of the Superradiant States in Asymmetric Fabry–Perot Cavity 非对称法布里-珀罗腔中超辐射态的结构和自调制特征

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050075

E. R. Kocharovskaya, Vl. V. Kocharovsky

Abstract

The dependence of the structure and stability of strongly asymmetric stationary states of a superradiant laser with a slightly asymmetric low-Q Fabry–Perot cavity on its length, reflection factors of mirrors, and pumping level is studied. The states are related to a self-consistent inhomogeneous half-wavelength population inversion grating. The possibility of the existence of two dynamic phase transitions from a stationary (monochromatic) state of this type to a nonstationary one is established: (1) a dissipative superradiant transition to a regime with a quasi-continuous lasing spectrum (in a weakly asymmetric cavity) and (2) a self-modulation transition to a regime with a discrete lasing spectrum. It is shown that the latter can be caused by excitation of both polariton and electromagnetic laser modes due to resonant Rabi oscillations of active centers with a sufficiently long phase relaxation time.

摘要研究了带有轻微不对称低 Q 值法布里-珀罗腔的超辐射激光器的强不对称静态的结构和稳定性对其长度、反射镜的反射系数和泵浦电平的依赖性。这些状态与自洽的不均匀半波长种群反转光栅有关。研究确定了从这种类型的静态（单色）状态到非静态状态存在两种动态相变的可能性：(1) 从耗散超辐射过渡到具有准连续激光光谱的状态（在弱不对称腔中）；(2) 从自调制过渡到具有离散激光光谱的状态。研究表明，后者可能是由于具有足够长相位弛豫时间的有源中心的共振拉比振荡激发了极化子和电磁激光模式。

引用次数: 0

Features of the Phase Transition in Thin Films of AgI Superionic Semiconductor AgI 超离子半导体薄膜的相变特征

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050099

A. A. Kononov, A. V. Ilinskiy, R. A. Castro, V. A. Klimov, M. E. Pashkevich, I. O. Popova, E. B. Shadrin

Abstract

The paper considers the features of relaxation processes that characterize the phase transition in the superionic semiconductor AgI. Two maxima correspond to the relaxation of arrays of free electrons and positively charged silver ions were found on the spectra of the dielectric loss tangent and on the Cole–Cole diagrams. It is shown that the material under study is characterized by a temperature hysteresis, which is expressed in the lag in temperature of the reverse phase transition from the superionic phase to the semiconductor one.

摘要本文研究了超离子半导体 AgI 相变过程中的弛豫特征。在介电损耗正切光谱和科尔-科尔图上发现了两个最大值，分别对应于自由电子阵列和带正电的银离子的弛豫。研究结果表明，所研究的材料具有温度滞后性，表现为从超离子相到半导体相的反向相变在温度上的滞后。

引用次数: 0

Polar Optical Phonons in Superlattices Si/SiO2 超晶格 Si/SiO2 中的极性光学声子

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050142

M. B. Smirnov, N. R. Grigorieva, D. V. Pankin, E. M. Roginskii, A. V. Savin

Abstract

A study was carried out of the dielectric properties of planar Si/SiO₂ heterostructures, which play an important role in modern electronics. Using the model of dielectric continuum, the spectra of polar phonons in Si/SiO₂ binary superlattices have been studied. Quartz and cristobalite lattices are considered as a structural model of the oxide layer. The dependences of polar optical phonons frequencies and the high-frequency dielectric constant tensor elements on the ratio of layer thicknesses were obtained. The results obtained open up the possibility of using spectroscopic data to characterize the structure of superlattices.

摘要对在现代电子学中发挥重要作用的平面 Si/SiO2 异质结构的介电性能进行了研究。利用介电连续体模型，研究了 Si/SiO2 二元超晶格中的极性声子光谱。石英和钙钛矿晶格被视为氧化物层的结构模型。获得了极性光学声子频率和高频介电常数张量元素对层厚度比的依赖关系。这些结果为利用光谱数据描述超晶格结构提供了可能。

引用次数: 0

Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate 基于硅衬底氮化镓/氮化铝/氮化镓异质结构的场 p 沟道晶体管

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050178

M. N. Zhuravlev, V. I. Egorkin

Abstract

Various types of p-channel field-effect transistors based on GaN/AlN/GaN heterostructures are considered. The channel is formed by a polarization-induced two-dimensional hole gas. It is shown that the highest values of saturation current and transconductance are observed in a transistor with a gate formed by a two-dimensional electron gas from the side of the substrate.

摘要研究了基于氮化镓/氮化铝/氮化镓异质结构的各种类型的 p 沟道场效应晶体管。沟道由极化诱导的二维空穴气体形成。研究表明，在栅极由来自衬底一侧的二维电子气体形成的晶体管中，可以观察到最高的饱和电流和跨导值。

引用次数: 0

Analysis of Stability of Generation in Quantum Well Lasers 量子阱激光器发电稳定性分析

IF 0.7 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER

Semiconductors

Pub Date : 2024-09-17 DOI: 10.1134/s1063782624050154

Z. N. Sokolova, L. V. Asryan

Abstract

A stability analysis of two modes of generation in semiconductor quantum well lasers is performed. These modes correspond to two solutions of the rate equations obtained by taking into account the internal optical loss that depends on the density of charge carriers injected into the laser waveguide region and, hence, on the injection current. It is shown that, in contrast to the first (“conventional”) mode of generation, which is always stable and hence observable, the second (“additional”) mode, which is entirely due to the internal loss that depends on the carrier density, is unstable and hence cannot be observed under the steady-state conditions in the laser structure considered in this work.

摘要对半导体量子阱激光器中产生的两种模式进行了稳定性分析。这些模式与速率方程的两种解相对应，前者考虑了内部光学损耗，后者取决于注入激光波导区的电荷载流子密度，因此也取决于注入电流。结果表明，第一种（"传统"）生成模式始终是稳定的，因此是可以观测到的，而第二种（"附加"）模式则完全是由于取决于载流子密度的内部损耗造成的，它是不稳定的，因此在本研究中考虑的激光结构的稳态条件下是无法观测到的。

引用次数: 0

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