非晶到晶体转变 YIG 薄膜中的纯自旋传输

Rui Yu, Jiefeng Cao, Haigang Liu, Fangyuan Zhu, Xiangyu Meng, Zhipeng Long, Junqin Li, Yong Wang
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摘要

磁绝缘体,尤其是 Y3Fe5O12(YIG),因其超低阻尼、高自旋注入效率和长距离自旋传播而被认为是自旋器件应用的理想候选材料。然而,这些引人入胜的特性都是基于结晶 YIG 薄膜进行广泛研究的。纯自旋现象,如 YIG 薄膜结构演变中的自旋传输,仍不清楚。本文系统地研究了由 YIG、具有不同结晶结构的插入层名义 YIG(n-YIG)和重金属铂(Pt)形成的夹层结构中的纯自旋传输。通过铁磁共振(FMR)驱动的反向自旋霍尔效应(ISHE)测量,检测到的 ISHE 电压信号与 n-YIG 的厚度及其结晶相具有很强的相关性。通过高温退火,结晶化的 n-YIG 的自旋传输得到了显著提高。这些结果表明,在 YIG 薄膜的结构演变过程中,纯自旋电流是可以传输的。此外,n-YIG 薄膜上特定元素的 X 射线吸收光谱 (XAS) 和 X 射线磁性圆二色性 (XMCD) 光谱显示结晶 n-YIG 的区别,这表明自旋传播与其磁序相关。这些发现对低耗散自旋设备具有指导意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Pure Spin Transport in YIG Films with Amorphous-to-Crystalline Transformation

Magnetic insulators, especially Y3Fe5O12 (YIG), are considered promising candidates for spin-based device applications due to their ultralow damping, high spin injection efficiency, and long-distance spin propagation. However, these intriguing features are widely studied based on crystallization YIG films. Pure spin phenomena, like spin transport in YIG films with structural evolution, remain unclear. Herein, pure spin transportation is systematically investigated in the sandwich structure formed by YIG, the inserted layer-nominal YIG (n-YIG) with a varied crystalline structure and heavy metal Platinum (Pt). By applying ferromagnetic resonance (FMR)-driven inverse spin Hall effect (ISHE) measurement, the detected ISHE voltage signal presented a strong correlation with the thickness of n-YIG and its crystalline phase. A significant increasement in spin transportation is obtained for the crystallized n-YIG via a high-temperature annealing. These results demonstrate that pure spin current is transported availably in the structural evolution of YIG films. Furthermore, the element-specific X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) spectra on the n-YIG films showed a distinction for the crystallized n-YIG which indicates that the spin propagation is correlated to its magnetic order. These findings are instructive for low-dissipation spin-based devices.

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