{"title":"氧气处理对 IWO 薄膜晶体管电气性能和可靠性的影响","authors":"Yi-Xuan Chen;Yi-Lin Wang;Fu-Jyuan Li;Shu-Jui Chang;Tsung-En Lee;Chao-Ching Cheng;Meng-Chien Lee;Hui-Hsuan Li;Yu-Hsien Lin;Chao-Hsin Chien","doi":"10.1109/TNANO.2024.3381478","DOIUrl":null,"url":null,"abstract":"In this work, we systematically investigated the effect of oxygen treatment on the material and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O\n<sub>2</sub>\n plasma and rapid thermal oxidation (RTO). With RTO treatment, the electrical characteristics of the IWO-TFTs remarkably depicted a subthreshold swing (\n<italic>S.S.</i>\n) of 122.5 mV/decade, an \n<italic>I</i>\n<sub>on</sub>\n/\n<italic>I</i>\n<sub>off</sub>\n of around 4.7×10\n<sup>8</sup>\n, and more superior immunity stress-induced degradation. According to the X-ray photoelectron spectroscopy (XPS) results under the RTO treatment condition, the lowest vacancy content and the highest Tungsten-Oxide (W-O) bond content were observed. It indicated that the RTO treatment was more effective in reducing the number of oxygen vacancies and stabilizing the bonding structure of IWO films. As a result, the IWO TFTs subjected to RTO treatment exhibited improved performance and enhanced reliability.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"23 ","pages":"299-302"},"PeriodicalIF":2.1000,"publicationDate":"2024-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors\",\"authors\":\"Yi-Xuan Chen;Yi-Lin Wang;Fu-Jyuan Li;Shu-Jui Chang;Tsung-En Lee;Chao-Ching Cheng;Meng-Chien Lee;Hui-Hsuan Li;Yu-Hsien Lin;Chao-Hsin Chien\",\"doi\":\"10.1109/TNANO.2024.3381478\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we systematically investigated the effect of oxygen treatment on the material and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O\\n<sub>2</sub>\\n plasma and rapid thermal oxidation (RTO). With RTO treatment, the electrical characteristics of the IWO-TFTs remarkably depicted a subthreshold swing (\\n<italic>S.S.</i>\\n) of 122.5 mV/decade, an \\n<italic>I</i>\\n<sub>on</sub>\\n/\\n<italic>I</i>\\n<sub>off</sub>\\n of around 4.7×10\\n<sup>8</sup>\\n, and more superior immunity stress-induced degradation. According to the X-ray photoelectron spectroscopy (XPS) results under the RTO treatment condition, the lowest vacancy content and the highest Tungsten-Oxide (W-O) bond content were observed. It indicated that the RTO treatment was more effective in reducing the number of oxygen vacancies and stabilizing the bonding structure of IWO films. As a result, the IWO TFTs subjected to RTO treatment exhibited improved performance and enhanced reliability.\",\"PeriodicalId\":449,\"journal\":{\"name\":\"IEEE Transactions on Nanotechnology\",\"volume\":\"23 \",\"pages\":\"299-302\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-03-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Nanotechnology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10478822/\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nanotechnology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10478822/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Effect of Oxygen Treatment on the Electrical Performance and Reliability of IWO Thin-Film Transistors
In this work, we systematically investigated the effect of oxygen treatment on the material and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O
2
plasma and rapid thermal oxidation (RTO). With RTO treatment, the electrical characteristics of the IWO-TFTs remarkably depicted a subthreshold swing (
S.S.
) of 122.5 mV/decade, an
I
on
/
I
off
of around 4.7×10
8
, and more superior immunity stress-induced degradation. According to the X-ray photoelectron spectroscopy (XPS) results under the RTO treatment condition, the lowest vacancy content and the highest Tungsten-Oxide (W-O) bond content were observed. It indicated that the RTO treatment was more effective in reducing the number of oxygen vacancies and stabilizing the bonding structure of IWO films. As a result, the IWO TFTs subjected to RTO treatment exhibited improved performance and enhanced reliability.
期刊介绍：
The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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