Kangwook Choi, Gyuweon Jung, Wonjun Shin, Jinwoo Park, Chayoung Lee, Donghee Kim, Hunhee Shin, Woo Young Choi, Jong-Ho Lee
{"title":"采用氧空位控制 In2O3 双传感层改善 NO2 气体响应的方法","authors":"Kangwook Choi, Gyuweon Jung, Wonjun Shin, Jinwoo Park, Chayoung Lee, Donghee Kim, Hunhee Shin, Woo Young Choi, Jong-Ho Lee","doi":"10.1016/j.sse.2024.108926","DOIUrl":null,"url":null,"abstract":"<div><p>Recent studies have shown that the sensing capabilities of NO<sub>2</sub> gas sensors can be enhanced by controlling the amount of oxygen vacancy (V<sub>O</sub>) in the sensing layer. The sensing layer of the resistor-type sensor can be divided into two regions close to the surface and substrate interface. To control the amount of oxygen vacancy in the sensing layer, oxygen gas flow rate during sputtering is regulated. We fabricate the In<sub>2</sub>O<sub>3</sub> gas sensor by vertically adjusting the oxygen vacancy. We place an oxygen vacancy-poor layer on the lower sensing layer and an oxygen vacancy-rich layer on the upper sensing layer. The resistance characteristics of the fabricated sensor are measured through the transmission line method. The NO<sub>2</sub> gas sensing performance of the double sensing layer sensor and the single sensing layer sensor is measured. The best response and fastest response time are observed in the sensor with oxygen vacancy controlled double sensing layer.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"216 ","pages":"Article 108926"},"PeriodicalIF":1.4000,"publicationDate":"2024-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"NO2 gas response improvement method by adopting oxygen vacancy controlled In2O3 double sensing layers\",\"authors\":\"Kangwook Choi, Gyuweon Jung, Wonjun Shin, Jinwoo Park, Chayoung Lee, Donghee Kim, Hunhee Shin, Woo Young Choi, Jong-Ho Lee\",\"doi\":\"10.1016/j.sse.2024.108926\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Recent studies have shown that the sensing capabilities of NO<sub>2</sub> gas sensors can be enhanced by controlling the amount of oxygen vacancy (V<sub>O</sub>) in the sensing layer. The sensing layer of the resistor-type sensor can be divided into two regions close to the surface and substrate interface. To control the amount of oxygen vacancy in the sensing layer, oxygen gas flow rate during sputtering is regulated. We fabricate the In<sub>2</sub>O<sub>3</sub> gas sensor by vertically adjusting the oxygen vacancy. We place an oxygen vacancy-poor layer on the lower sensing layer and an oxygen vacancy-rich layer on the upper sensing layer. The resistance characteristics of the fabricated sensor are measured through the transmission line method. The NO<sub>2</sub> gas sensing performance of the double sensing layer sensor and the single sensing layer sensor is measured. The best response and fastest response time are observed in the sensor with oxygen vacancy controlled double sensing layer.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"216 \",\"pages\":\"Article 108926\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-03-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124000753\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000753","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
NO2 gas response improvement method by adopting oxygen vacancy controlled In2O3 double sensing layers
Recent studies have shown that the sensing capabilities of NO2 gas sensors can be enhanced by controlling the amount of oxygen vacancy (VO) in the sensing layer. The sensing layer of the resistor-type sensor can be divided into two regions close to the surface and substrate interface. To control the amount of oxygen vacancy in the sensing layer, oxygen gas flow rate during sputtering is regulated. We fabricate the In2O3 gas sensor by vertically adjusting the oxygen vacancy. We place an oxygen vacancy-poor layer on the lower sensing layer and an oxygen vacancy-rich layer on the upper sensing layer. The resistance characteristics of the fabricated sensor are measured through the transmission line method. The NO2 gas sensing performance of the double sensing layer sensor and the single sensing layer sensor is measured. The best response and fastest response time are observed in the sensor with oxygen vacancy controlled double sensing layer.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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