双像素图像传感器垂直引脚光电二极管的引脚电压模型

IF 1.4 4区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-03-30 DOI:10.1016/j.sse.2024.108919
Hyeon Soo Ahn , Donguk Kim , Jan Genoe , Jiwon Lee
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引用次数: 0

摘要

本文为相位检测自动对焦应用中双像素配置中使用的垂直引脚光电二极管的引脚电压提供了一个简单的解决方案。传统方形深度光电二极管的解析解已在其他地方介绍过。但是,该模型无法应用于双像素,即一个正方形像素包含两个矩形光电二极管。因此,我们为双像素矩形深光电二极管提出了一个简单的分析模型,并通过 TCAD 仿真验证了其准确性。所提出的模型能准确预测双像素深光电二极管内部的引脚电压和电位,从而证实了它在像素的实例设计和光电二极管设计分析中的实用性。
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Pinning voltage model of vertical pinned photodiode for Dual-Pixel image sensor

This paper presents a simple solution for the pinning voltage of vertical pinned photodiode used in a dual-pixel configuration for phase-detection autofocus applications. Analytic solution of the conventional square deep photodiode has been presented elsewhere. However, this model cannot be adopted to dual pixel where a square pixel contains two rectangular photodiodes. Therefore, we propose a simple analytical model for the rectangular deep photodiode for dual pixels and validate its accuracy by TCAD simulations. The presented model accurately predicts the pinning voltage and potential inside the deep photodiode for dual pixels, thereby confirming its usefulness in the ab-initio design of the pixel as well as in the analysis of the photodiode design.

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来源期刊
Solid-state Electronics
Solid-state Electronics 物理-工程:电子与电气
CiteScore
3.00
自引率
5.90%
发文量
212
审稿时长
3 months
期刊介绍: It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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