硫化镉/4-氨基-2-甲基喹啉异质结结构的电气特性

R. Demi̇r, İsmet Kaya
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引用次数: 0

摘要

我们利用 n-CdS 薄膜在 p-C10H10N2 薄膜上形成了异质结结构。研究发现,在室温下,CdS/C10H10N2 的正向电流-电压(I-V)特性表现为整流行为,势垒高度值为 0.79 eV,理想因子值为 1.93。形成 CdS/C10H10N2 的肖特基势垒二极管显示出非理想的电流-电压 (I-V) 行为,其特征是 1 个表观因子超过 1。这种偏差可归因于界面层、界面状态和串联电阻等因素。此外,利用张氏函数和修正的诺德函数确定了二极管参数,包括理想度系数、势垒高度和串联电阻。比较结果表明,所有方法的势垒高度值一致,表明这些方法具有兼容性。不过,根据 Norde 函数得出的串联电阻值要高于根据 Cheung 函数得出的值。
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Electrical Characteristics of Cadmium Sulfide/4-Amino-2-Methyl-Quinoline Heterojunction Structure
We formed a heterojunction structure on a p-C10H10N2 film using n-CdS film. It was found that the forward current-voltage (I-V) characteristic of CdS/C10H10N2 exhibited rectifying behavior with a barrier height value of 0.79 eV and an ideality factor value of 1.93 at room temperature. The Schottky barrier diode formed CdS/C10H10N2 displayed non-ideal current-voltage (I-V) behavior, characterized by 1 ideality factor exceeding one. This deviation can be attributed to factors such as the interface layer, interface states, and series resistance. Moreover, the determination of diode parameters, including ideality factor, barrier height, and series resistance, utilized Cheung's functions and a modified Norde function. The comparison revealed consistent barrier height values across all methods, indicating compatibility. Nevertheless, the series resistance values derived from the Norde function were found to be higher than those obtained from the Cheung functions.
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