纳米厚度极紫外粒子的理论研究

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Solid-state Electronics Pub Date : 2024-03-30 DOI:10.1016/j.sse.2024.108924

Sang-Kon Kim

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引用次数: 0

摘要

在大批量制造（HVM）过程中，需要使用极紫外（EUV）粒子来管理 EUV 缺陷。对纳米厚度的极紫外粒子进行理论分析有助于这些制造。本文针对最大横向挠度，将分析-数值方法与有限元方法（FEM）进行了对比，其原因在于 EUV 粒子的厚度和宽度长度之比。在厚度为微米单位时，两者之间的差异增大。利用深度学习中的单变量和多变量线性回归方法，分别克服了基于有限元法的 ANSYS 限制，如厚度超过 10 μm 的网格划分，以及剪切加载，这是有限元法中的一个误差，是由于梁元素中的长厚比增加变化对刚度矩阵的影响造成的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Theoretical study of extreme ultraviolet pellicles with nanometer thicknesses

Extreme ultraviolet (EUV) pellicles are required for EUV defectivity management in high volume manufacturing (HVM). Theoretical analysis of EUV pellicles of nanometer thickness is helpful for these fabrications. In this paper, for maximum transverse deflection, an analytical–numerical method is contrasted against the finite element method (FEM) due to the ratio of thickness and width length of EUV pellicles. The difference was increased at a thickness of micron unit. Single- and multiple-variable methods of linear regression in deep learning were used to overcome the ANSYS limitation based on FEM, such as the meshing of more than 10 $μ m$ thickness, and shear loading, an error in FEM resulting from the impact on the stiffness matrix caused by variations in the length-to-thickness ratio increases in the beam element, respectively.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.