Shruti Pathak , Sumreti Gupta , Aarti Rathi , P. Srinivasan , Abhisek Dixit
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Impact of Gate Oxide Thickness on Flicker Noise (1/f) in PDSOI n-channel FETs
This work reports the impact of gate oxide thickness on flicker noise (1/f) in 45-nm RFSOI NFET devices. In addition, the effect of finger width scaling on 1/f noise parameters is studied in linear region. The dominant source of 1/f noise is also analyzed. It is observed that thin oxide devices show carrier number fluctuation; however, for thick oxide devices, correlated number-mobility govern the noise. Extracted trap densities using 1/f noise show higher volume trap densities in thin oxide devices. Moreover, trap distribution behavior is analyzed using frequency exponent. Further, GLOBALFOUNDRIES PDK is utilized to model 1/f noise behavior of the devices.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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