{"title":"GaN HEMT 器件的改进型小信号模型","authors":"Jing Bai, Ao Zhang, Jiali Cheng, Jianjun Gao","doi":"10.1002/jnm.3237","DOIUrl":null,"url":null,"abstract":"<p>An improved small-signal model applied to GaN-based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut-off method. In order to obtain a good agreement between model simulations and measurements, distributed capacitive effects are taken into account. In addition, an inductance <i>L</i><sub>ds</sub> is introduced based on the conventional intrinsic equivalent circuit topology. Good agreement between the modeled and measured <i>S</i>-parameters is obtained for GaN HEMTs with a gate width of 2 × 100 μm (number of gate fingers × unit gate width) in the frequency range of 0.5–40 GHz.</p>","PeriodicalId":50300,"journal":{"name":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","volume":"37 3","pages":""},"PeriodicalIF":1.6000,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An improved small-signal model for GaN HEMTs devices\",\"authors\":\"Jing Bai, Ao Zhang, Jiali Cheng, Jianjun Gao\",\"doi\":\"10.1002/jnm.3237\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>An improved small-signal model applied to GaN-based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut-off method. In order to obtain a good agreement between model simulations and measurements, distributed capacitive effects are taken into account. In addition, an inductance <i>L</i><sub>ds</sub> is introduced based on the conventional intrinsic equivalent circuit topology. Good agreement between the modeled and measured <i>S</i>-parameters is obtained for GaN HEMTs with a gate width of 2 × 100 μm (number of gate fingers × unit gate width) in the frequency range of 0.5–40 GHz.</p>\",\"PeriodicalId\":50300,\"journal\":{\"name\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"volume\":\"37 3\",\"pages\":\"\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Numerical Modelling-Electronic Networks Devices and Fields\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3237\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Numerical Modelling-Electronic Networks Devices and Fields","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/jnm.3237","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
本文介绍了一种适用于氮化镓基器件的改进型小信号模型。利用测试结构和截止法提取了等效电路拓扑的外在元素。为了在模型模拟和测量之间取得良好的一致性，考虑了分布电容效应。此外，还根据传统的本征等效电路拓扑引入了电感 Lds。对于栅极宽度为 2 × 100 μm（栅极指数 × 单位栅极宽度）的 GaN HEMT，在 0.5-40 GHz 频率范围内，建模与测量的 S 参数之间获得了良好的一致性。
An improved small-signal model for GaN HEMTs devices
An improved small-signal model applied to GaN-based devices is presented in this article. The extrinsic elements of the equivalent circuit topology are extracted using the test structures and the cut-off method. In order to obtain a good agreement between model simulations and measurements, distributed capacitive effects are taken into account. In addition, an inductance Lds is introduced based on the conventional intrinsic equivalent circuit topology. Good agreement between the modeled and measured S-parameters is obtained for GaN HEMTs with a gate width of 2 × 100 μm (number of gate fingers × unit gate width) in the frequency range of 0.5–40 GHz.
期刊介绍：
Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models.
The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics.
Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.
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