关于非对称纳米粒子制备的 Bi2Te2.7Se0.3/Teδ 复合材料的合成、微观结构和热电性能

IF 0.6 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Semiconductors Pub Date : 2024-04-18 DOI:10.1134/s1063782624700027
M. N. Yapryntsev, M. S. Ozerov
{"title":"关于非对称纳米粒子制备的 Bi2Te2.7Se0.3/Teδ 复合材料的合成、微观结构和热电性能","authors":"M. N. Yapryntsev, M. S. Ozerov","doi":"10.1134/s1063782624700027","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract—</h3><p>Composite materials Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub>/Te<sub>δ</sub> with varying concentration (δ = 0.15, 0.2, 0.25, and 0.3) are obtained by the solvothermal synthesis of initial powders and their subsequent spark plasma sintering. During the sintering process, the samples are textured, as a result of which lamellar grains are arranged in layers perpendicular to the direction of the application of pressure during sintering (the direction of the texture axis). Upon magnification, the concentration of superstoichiometric tellurium decreases the degree of texturing. The concentration of tellurium does not affect the average grain size. Superstoichiometric tellurium is distributed along the grain boundaries, as a result of which a structure characteristic of composite materials is formed. The release of tellurium at the grain boundaries leads to a change in the thermoelectric properties of the obtained materials. The electrical resistivity naturally increases, and the total thermal conductivity decreases with an increase in the concentration of superstoichiometric tellurium.</p>","PeriodicalId":21760,"journal":{"name":"Semiconductors","volume":"25 1","pages":""},"PeriodicalIF":0.6000,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"On the Synthesis, Microstructure, and Thermoelectric Properties of the Composite Material Bi2Te2.7Se0.3/Teδ Obtained from Asymmetric Nanoparticles\",\"authors\":\"M. N. Yapryntsev, M. S. Ozerov\",\"doi\":\"10.1134/s1063782624700027\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract—</h3><p>Composite materials Bi<sub>2</sub>Te<sub>2.7</sub>Se<sub>0.3</sub>/Te<sub>δ</sub> with varying concentration (δ = 0.15, 0.2, 0.25, and 0.3) are obtained by the solvothermal synthesis of initial powders and their subsequent spark plasma sintering. During the sintering process, the samples are textured, as a result of which lamellar grains are arranged in layers perpendicular to the direction of the application of pressure during sintering (the direction of the texture axis). Upon magnification, the concentration of superstoichiometric tellurium decreases the degree of texturing. The concentration of tellurium does not affect the average grain size. Superstoichiometric tellurium is distributed along the grain boundaries, as a result of which a structure characteristic of composite materials is formed. The release of tellurium at the grain boundaries leads to a change in the thermoelectric properties of the obtained materials. The electrical resistivity naturally increases, and the total thermal conductivity decreases with an increase in the concentration of superstoichiometric tellurium.</p>\",\"PeriodicalId\":21760,\"journal\":{\"name\":\"Semiconductors\",\"volume\":\"25 1\",\"pages\":\"\"},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2024-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductors\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063782624700027\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductors","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063782624700027","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0

摘要

摘要--通过溶热合成初始粉末和随后的火花等离子烧结,获得了不同浓度(δ = 0.15、0.2、0.25 和 0.3)的 Bi2Te2.7Se0.3/Teδ复合材料。在烧结过程中,样品会产生纹理,因此片状晶粒会垂直于烧结过程中的加压方向(纹理轴线方向)分层排列。放大后,超一几何碲的浓度会降低纹理的程度。碲的浓度不会影响平均晶粒大小。超计量碲沿晶界分布,因此形成了复合材料特有的结构。碲在晶界的释放导致所获得材料的热电特性发生变化。随着超一几何碲浓度的增加,电阻率自然增加,总热导率降低。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

摘要图片

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
On the Synthesis, Microstructure, and Thermoelectric Properties of the Composite Material Bi2Te2.7Se0.3/Teδ Obtained from Asymmetric Nanoparticles

Abstract—

Composite materials Bi2Te2.7Se0.3/Teδ with varying concentration (δ = 0.15, 0.2, 0.25, and 0.3) are obtained by the solvothermal synthesis of initial powders and their subsequent spark plasma sintering. During the sintering process, the samples are textured, as a result of which lamellar grains are arranged in layers perpendicular to the direction of the application of pressure during sintering (the direction of the texture axis). Upon magnification, the concentration of superstoichiometric tellurium decreases the degree of texturing. The concentration of tellurium does not affect the average grain size. Superstoichiometric tellurium is distributed along the grain boundaries, as a result of which a structure characteristic of composite materials is formed. The release of tellurium at the grain boundaries leads to a change in the thermoelectric properties of the obtained materials. The electrical resistivity naturally increases, and the total thermal conductivity decreases with an increase in the concentration of superstoichiometric tellurium.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Semiconductors
Semiconductors 物理-物理:凝聚态物理
CiteScore
1.50
自引率
28.60%
发文量
131
审稿时长
3-6 weeks
期刊介绍: Publishes the most important work in semiconductor research in the countries of the former Soviet Union. Covers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, semiconductor lasers and semiconductor surface physics. The journal features an extensive book review section.
期刊最新文献
Luminescence in p–i–n Structures with Compensated Quantum Wells Structure and Self-Modulation Features of the Superradiant States in Asymmetric Fabry–Perot Cavity Mechanisms of Optical Gain in Heavily Doped AlxGa1 – xN:Si Structures (x = 0.56–1) Spatial Inhomogeneity of Impact-Ionization Switching Process in Power Si Diode Effect of Electric Field on Excitons in a Quantum Well under Additional Optical Excitation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1