Ao Lu , Xiaofei Pan , Xinjie Zhou , Yang Li , Xiao Wang , Jinping Ao , Dawei Yan
{"title":"GaN pi-n 二极管的正向漏电流","authors":"Ao Lu , Xiaofei Pan , Xinjie Zhou , Yang Li , Xiao Wang , Jinping Ao , Dawei Yan","doi":"10.1016/j.sse.2024.108936","DOIUrl":null,"url":null,"abstract":"<div><p>Excessive forward leakage currents in GaN p-i-n diodes were investigated. Traditional diffusion mechanism dominates at <em>V</em><sub>F</sub> > 2 V. The effective band gap is derived to be ∼2.21 eV, which is much lower than 3.4 eV and attributed to a band fluctuation caused by dislocations; At 1.35 V < <em>V</em><sub>F</sub> < 2 V, a trap-assisted tunneling process becomes important, whose ideality factor is still larger than 4.1 at <em>T</em> = 400 K; Two distinct power-law relationships were observed at lower biases, separated at <em>V</em><sub>F</sub> = 0.8 V, whose exponents are extracted to be ∼8 and ∼4, respectively. The behavior is in a good agreement with the space-charge-limited model, featuring an exponentially decaying distribution of trap states below the conduction band.</p></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"217 ","pages":"Article 108936"},"PeriodicalIF":1.4000,"publicationDate":"2024-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Forward leakage currents in GaN p-i-n diodes\",\"authors\":\"Ao Lu , Xiaofei Pan , Xinjie Zhou , Yang Li , Xiao Wang , Jinping Ao , Dawei Yan\",\"doi\":\"10.1016/j.sse.2024.108936\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Excessive forward leakage currents in GaN p-i-n diodes were investigated. Traditional diffusion mechanism dominates at <em>V</em><sub>F</sub> > 2 V. The effective band gap is derived to be ∼2.21 eV, which is much lower than 3.4 eV and attributed to a band fluctuation caused by dislocations; At 1.35 V < <em>V</em><sub>F</sub> < 2 V, a trap-assisted tunneling process becomes important, whose ideality factor is still larger than 4.1 at <em>T</em> = 400 K; Two distinct power-law relationships were observed at lower biases, separated at <em>V</em><sub>F</sub> = 0.8 V, whose exponents are extracted to be ∼8 and ∼4, respectively. The behavior is in a good agreement with the space-charge-limited model, featuring an exponentially decaying distribution of trap states below the conduction band.</p></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"217 \",\"pages\":\"Article 108936\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-04-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124000856\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124000856","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
研究了 GaN pi-n 二极管中过大的正向漏电流。传统的扩散机制在 VF > 2 V 时占主导地位。在 1.35 V < VF < 2 V 时，阱辅助隧穿过程变得重要，其表意系数仍大于 4。在 T = 400 K 时，阱辅助隧道过程变得非常重要，其意念系数仍然大于 4；在 VF = 0.8 V 时，在较低偏压下观察到两个不同的幂律关系，其指数分别为 ∼8 和 ∼4。这种行为与空间电荷限制模型十分吻合，其特点是导带以下的阱态分布呈指数衰减。
Excessive forward leakage currents in GaN p-i-n diodes were investigated. Traditional diffusion mechanism dominates at VF > 2 V. The effective band gap is derived to be ∼2.21 eV, which is much lower than 3.4 eV and attributed to a band fluctuation caused by dislocations; At 1.35 V < VF < 2 V, a trap-assisted tunneling process becomes important, whose ideality factor is still larger than 4.1 at T = 400 K; Two distinct power-law relationships were observed at lower biases, separated at VF = 0.8 V, whose exponents are extracted to be ∼8 and ∼4, respectively. The behavior is in a good agreement with the space-charge-limited model, featuring an exponentially decaying distribution of trap states below the conduction band.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
