在无合金化工艺的重度 Al+ 植入 p 型碳化硅上形成欧姆触点

IF 1.5 4区物理与天体物理 Q3 PHYSICS, APPLIED Japanese Journal of Applied Physics Pub Date : 2024-04-25 DOI:10.35848/1347-4065/ad43cf

Kotaro Kuwahara, Takeaki Kitawaki, Masahiro Hara, M. Kaneko, Tsunenobu Kimoto

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引用次数: 0

摘要

研究了在未进行合金化处理的重度铝+植入 p 型碳化硅上形成的镍电极的电流-电压（I-V）特性和接触电阻率（ρ c）。通过高剂量 Al+ 植入（3.1×1020 cm-3），非合金化镍电极的 I-V 曲线接近欧姆，ρ c 为 9.3×10-2 Ωcm2。实验性 ρ c 的净受体密度依赖性可以通过直接隧穿和陷阱辅助隧穿的贡献率变化来描述。

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Formation of ohmic contacts on heavily Al+-implanted p-type SiC without alloying process

Current–voltage (I–V) characteristics and contact resistivity (ρ c) of the Ni electrodes formed on heavily Al+-implanted p-type SiC without alloying process were investigated. A nearly ohmic I–V curve with ρ c of 9.3×10–2 Ωcm2 is demonstrated for non-alloyed Ni electrodes by very high-dose Al+ implantation (3.1×1020 cm−3). The net acceptor density dependence of the experimental ρ c can be described by a change in the contribution of direct tunneling and trap-assisted tunneling.

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来源期刊

Japanese Journal of Applied Physics 物理-物理：应用

CiteScore

3.00

自引率

26.70%

发文量

818

审稿时长

3.5 months

期刊介绍： The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS