二维 NS-FDTD 域中任意介质边界的精确非标准路径积分模型

T. Ohtani, Y. Kanai, N. Kantartzis
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摘要

本文介绍了一种高效的路径积分(PI)模型,用于通过二维非标准有限差分时域(NS-FDTD)技术精确分析粗网格上的弯曲介电结构。与以往完全电导体情况下的 PI 实现(在弯曲表面附近采用正交单元)不同,新的 PI 模型采用了必要单元中介质的占位比,从而为处理各种实际应用提供了直接而有指导意义的方法。为了验证该模型,我们使用 PI 模型研究了平板的反射和圆柱体的散射。结果表明,在粗网格上的 NS-FDTD 算法中,该特色方法可以对任意形状的电介质进行可靠而精确的建模。
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Accurate Nonstandard Path Integral Models for Arbitrary Dielectric Boundaries in 2-D NS-FDTD Domains
An efficient path integral (PI) model for the accurate analysis of curved dielectric structures on coarse grids via the two-dimensional nonstandard finite-difference time-domain (NS-FDTD) technique is introduced in this paper. In contrast to previous PI implementations of the perfectly electric conductor case, which accommodates orthogonal cells in the vicinity of curved surfaces, the novel PI model employs the occupation ratio of dielectrics in the necessary cells, providing thus a straightforward and instructive means to treat an assortment of practical applications. For its verification, the reflection from a flat plate and the scattering from a cylinder using the PI model are investigated. Results indicate that the featured methodology can enable the reliable and precise modeling of arbitrarily shaped dielectrics in the NS-FDTD algorithm on coarse grids.
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