Sabuj Chowdhury , Sabrina Alam , Md Didarul Alam , Fahmida Sharmin Jui
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引用次数: 0
摘要
通过采用激光升华（LLO）技术，可以将分立的 III-N 元件移动到任何基底上，从而实现柔性电子器件的开发、更好的散热能力、更高的 LED 光提取效率，以及用于功率电子器件的反向势垒 N 极高电子迁移率晶体管（HEMT）的实现。在本文中，我们将重点评估 LLO 机制及其在 III-N 外延层和器件中的应用，并评估其结构和电子特性，从而概述用于 III-N 微电子的 LLO 技术的进展。
Laser lift-off technique for applications in III-N microelectronics: A review
The development of flexible electronics, better heat dissipation capabilities, increased LED light extraction efficiency, and the implementation of inverted barrier N-polar high electron mobility transistor (HEMT) for power electronics are all made possible by adopting laser lift-off (LLO), a technology that enables the movement of discrete III-N elements onto any substrates which are otherwise not attainable. In this paper, we focus on evaluating the LLO mechanism, its application for III-N epilayers and devices, and assessing their structural and electronic characteristics to give an overview of the advancement in LLO technology for III-N microelectronics.
期刊介绍：
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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