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引用次数: 0
摘要
根据这些成分氧化物层的能带排列和化学趋势，对用于设置高 K/金属 CMOS 栅极堆栈阈值电压的氧化物偶极层进行了密度泛函分析。研究发现，氧化物 SrO、La2O3、HfO2 和 Al2O3 具有相似的带隙，并形成 "阶梯 "带排列，使它们能够在 n 型和 p 型方向上移动金属电极费米级。这一分析取代了以往主要基于金属氧化物离子密度或电负性标度的经验模型。
Density functional model of threshold voltage shifts at High-K/Metal gates
A density functional analysis of oxide dipole layers used to set the threshold voltages in high-K/metal CMOS gate stacks is given in terms of the band alignments and chemical trends of these component oxide layers. The oxides SrO, La2O3, HfO2 and Al2O3 are found to have similar band gaps and form a ‘staircase’ of band alignments, allowing them to shift the metal electrode Fermi level in both n-type and p-type directions. This analysis supersedes previous largely empirical models based on metal oxide ion densities or electronegativity scales.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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