具有 LPF 和 HPF 噪声匹配功能的 GaN 低噪声放大器 MMIC

IF 2.6 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronic Engineering Pub Date : 2024-05-04 DOI:10.1016/j.mee.2024.112199
Mohammad Zaid , Purnima Kumari , Mohammad Sajid Nazir , Ahtisham Pampori , Umakant Goyal , Meena Mishra , Yogesh Singh Chauhan
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引用次数: 0

摘要

在本文中,我们介绍了两种创新的两级低噪声放大器(LNA),每种放大器都具有不同的噪声匹配网络。第一个低噪声放大器采用低通滤波器(LPF)在两级进行噪声匹配,第二个低噪声放大器采用高通滤波器(HPF)进行类似的噪声匹配。我们的研究重点是评估在特定频率范围内使用不同匹配网络所产生的性能差异。为了突出选择适当的网络对优化增益和噪声性能的关键作用,我们的方法包括利用 0.25μm 氮化镓(GaN)尖端技术开发两个单片微波集成电路(MMIC)。C 波段 LNA 的频率范围为 4-6 GHz,平均噪声系数 (NF) 为 1.5 dB,增益为 17 dB,令人印象深刻。在 8-10 GHz 的 X 波段范围内,该 LNA 的平均 NF 值为 1.7 dB,增益为 16 dB,值得称赞,证明了我们新颖设计策略的有效性。
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GaN low noise amplifier MMIC with LPF and HPF noise matching

In this paper, we introduce two innovative two-stage low noise amplifiers (LNAs), each with distinct noise-matching networks. The first LNA features a low pass filter (LPF) for noise-matching in both stages, while the second uses a high pass filter (HPF) in a similar capacity. Our research focuses on evaluating the performance differences that arise from using varied matching networks within specific frequency ranges. Highlighting the critical role of appropriate network selection for optimizing gain and noise performance, our approach includes the development of two Monolithic Microwave Integrated Circuits (MMICs) using cutting-edge 0.25μm Gallium Nitride (GaN) technology. The C-band LNA, targeting a frequency range of 4–6 GHz, achieves an impressive average noise fig. (NF) of 1.5 dB and a gain of 17 dB. For the X-band range of 8–10 GHz, the LNA records a commendable average NF of 1.7 dB and a gain of 16 dB, demonstrating the effectiveness of our novel design strategies.

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来源期刊
Microelectronic Engineering
Microelectronic Engineering 工程技术-工程:电子与电气
CiteScore
5.30
自引率
4.30%
发文量
131
审稿时长
29 days
期刊介绍: Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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