低功耗抗 TNU 加固闩锁设计

IF 1.6 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronics Reliability Pub Date : 2024-05-08 DOI:10.1016/j.microrel.2024.115417
Zhengfeng Huang , Lei Ai , Xinyu Jiang , Zhouyu Gong , Xiaolei Wang , Yingchun Lu , Tai Song , Yiming Ouyang , Aibin Yan
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引用次数: 0

摘要

将集成电路技术扩展到纳米级特征尺寸,降低了现有单节点-上集和双节点-上集加固技术在恶劣辐射环境中的有效性。本文提出了一种基于近似 C 元素和交叉互锁结构的低功耗三节点重置弹性锁存器(LP-TNU)。基于 C 元素的滤波特性和冗余反馈结构,所提出的 LP-TNU 实现了 TNU 弹性。大量仿真结果证明了所提出锁存器的鲁棒性。由于采用了时钟门控技术和更少的晶体管,拟议的 LP-TNU 实现了极低的功耗。与参考锁存器相比,所提出的锁存器具有最低的功耗和功率-延迟积,是最稳健的锁存器。此外,与 DNUHL、LCTNURL、TNURL、HLTNURL 和 TNUSH 等抗 TNU 锁存器相比,所提出的 LP-TNU 平均功耗降低了 62.68%,平均延迟降低了 9.54%,平均面积开销降低了 20.75%,平均面积-功耗-延迟乘积降低了 69.98%。同时,所提出的锁存器对工艺、电源电压和工作温度的变化不敏感。
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A low power TNU-resilient hardened latch design

Technology scaling of integrated circuits into nanoscale feature sizes has decreased the effectiveness of existing single-node-upset and double-node-upset hardening techniques in harsh radiation environments. This paper proposes a low-power triple-node-upset resilient latch (LP-TNU) based on approximate C-elements and cross-interlocking structure. The proposed LP-TNU achieves TNU resilience based on the filtering feature of C-elements and redundant feedback structure. Extensive simulation results demonstrate the robustness of the proposed latch. The proposed LP-TNU achieves extremely low power consumption because of the clock-gating technique and fewer transistors. Compared with reference latches, the proposed latch is the most robust with the lowest power consumption and power-delay-product. In addition, compared with TNU-resilient latches such as DNUHL, LCTNURL, TNURL, HLTNURL and TNUSH, the proposed LP-TNU achieves a 62.68 % reduction on average in power consumption, 9.54 % reduction on average in delay, 20.75 % reduction on average in area overhead, 69.98 % reduction on average in the area-power-delay product. At the same time, the proposed latch is insensitive to variations of the process, supply voltage, and working temperature.

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来源期刊
Microelectronics Reliability
Microelectronics Reliability 工程技术-工程:电子与电气
CiteScore
3.30
自引率
12.50%
发文量
342
审稿时长
68 days
期刊介绍: Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.
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