Nakka Praveenkumar, Nasina Madhusudhana Rao and Maddikera Kalyan Chakravarthi
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Energy-dispersive X-ray analysis confirmed the presence of Zn, P, and Mn in the samples, and all of the synthesized samples achieved a nearly atomic ratio. In the diffused reflectance spectra, the optical band gap increases from 1.398 to 1.418 eV with increasing dopant concentration. PL has provided evidence indicating that the emission intensity of all doped samples remains constant with increasing dopant content from x = 0.02 to 0.08, with different excitation wavelengths (215 and 290 nm). Vibrating sample magnetometer tests confirmed the presence of ferromagnetic behavior at room temperature, and a positive correlation between saturation magnetization and Mn content, with the magnetic moment increasing from 0.0640 to 0.1181 emu g−1 with an increase in dopant content. Highlights Mn-doped Zn3P2 nanoparticles synthesized by solid-state reaction method. Characterization analysis of as prepared nanoparticles using XRD, SEM, EDAX, UV–vis-NIR, PL, and VSM. Mn (x = 0.08) doped Zn3P2 showed strong room temperature ferromagnetism than Mn (x = 0.02 to 0.06) doped Zn3P2 nanoparticles. 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引用次数: 0
摘要
通过常规固态反应和真空退火工艺合成了掺锰的 Zn3P2 稀释磁性半导体纳米粒子(Zn0.98Mn0.02P2、Zn0.96Mn0.04P2、Zn0.94Mn0.06P2 和 Zn0.92Mn0.08P2)。X 射线衍射研究证实,纯 Zn3P2 和掺锰 Zn3P2 形成了四方结构,没有任何其他相的迹象。随着掺杂浓度的增加,晶格参数从 a = b = 8.133 Å、c = 11.459 Å 下降到 a = b = 8.041 Å、c = 11.410 Å。扫描电子显微镜分析表明,所有经过掺杂的样品在 500 纳米的扫描范围内都出现了团聚现象。能量色散 X 射线分析证实了样品中锌、钯和锰的存在,而且所有合成样品都达到了接近原子的比例。在漫反射光谱中,随着掺杂浓度的增加,光带隙从 1.398 eV 增加到 1.418 eV。聚光光谱显示,在不同的激发波长(215 纳米和 290 纳米)下,随着掺杂剂含量从 x = 0.02 增加到 0.08,所有掺杂样品的发射强度保持不变。振动样品磁力计测试证实了样品在室温下具有铁磁性,而且饱和磁化率与锰含量呈正相关,磁矩随着掺杂剂含量的增加从 0.0640 增至 0.1181 emu g-1。亮点 通过固态反应方法合成了掺锰的 Zn3P2 纳米粒子。使用 XRD、SEM、EDAX、UV-vis-NIR、PL 和 VSM 对制备的纳米粒子进行表征分析。掺杂锰(x = 0.08)的 Zn3P2 比掺杂锰(x = 0.02 至 0.06)的 Zn3P2 纳米粒子具有更强的室温铁磁性。掺锰的 Zn3P2 纳米粒子是未来自旋电子学的潜在材料。
Structural, Optical, and Magnetic Properties of Mn Doped Zn3P2 Diluted Magnetic Semiconductor Nanoparticles
Mn-doped Zn3P2-diluted magnetic semiconducting nanoparticles (Zn0.98Mn0.02P2, Zn0.96Mn0.04P2, Zn0.94Mn0.06P2, and Zn0.92Mn0.08P2) were synthesized by a conventional solid-state reaction followed by a subsequent vacuum annealing process. The formation of a tetragonal structure of pure and Mn-doped Zn3P2 was confirmed by X-ray diffraction studies, with no evidence of any further phases. Lattice parameters dicrease from a = b = 8.133 Å, c = 11.459 Å to a = b = 8.041 Å, c = 11.410 Å with increasing dopant concentration. Scanning electron microscpy analysis indicated that all samples that underwent doping exhibited agglomeration in the scanned range of 500 nm. Energy-dispersive X-ray analysis confirmed the presence of Zn, P, and Mn in the samples, and all of the synthesized samples achieved a nearly atomic ratio. In the diffused reflectance spectra, the optical band gap increases from 1.398 to 1.418 eV with increasing dopant concentration. PL has provided evidence indicating that the emission intensity of all doped samples remains constant with increasing dopant content from x = 0.02 to 0.08, with different excitation wavelengths (215 and 290 nm). Vibrating sample magnetometer tests confirmed the presence of ferromagnetic behavior at room temperature, and a positive correlation between saturation magnetization and Mn content, with the magnetic moment increasing from 0.0640 to 0.1181 emu g−1 with an increase in dopant content. Highlights Mn-doped Zn3P2 nanoparticles synthesized by solid-state reaction method. Characterization analysis of as prepared nanoparticles using XRD, SEM, EDAX, UV–vis-NIR, PL, and VSM. Mn (x = 0.08) doped Zn3P2 showed strong room temperature ferromagnetism than Mn (x = 0.02 to 0.06) doped Zn3P2 nanoparticles. Mn-doped Zn3P2 nanoparticles are potential materials for future spintronics.
期刊介绍:
The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices.
JSS has five topical interest areas:
carbon nanostructures and devices
dielectric science and materials
electronic materials and processing
electronic and photonic devices and systems
luminescence and display materials, devices and processing.