Low power content addressable memory designing and implementation using voltage swing self adjustable match line technique

One of the essential components of computer systems is memory. A primary hindrance in this regard is the memory speed. Content Addressable Memory (CAM) speeds up transformations and table lookups in network routers and data processing systems for hardware search engines. Parallel seeks using the CAM (Content Addressable Memory) model are often used to enhance memory performance. This paper uses the voltage swing self-adjustable match line (VSSA-ML) technique to describe low-power content addressable memory design and implementation. This project decreases Match Line (ML) power loss by reducing load capacitance and ML voltage swing. A simple ML voltage detector is proposed instead of the complex, fully different detector that allows ML voltage swings near zero. This paper presents 6 T 8×8 CAM arrays using VSSA-ML Technique using Tanner tools 45-nm technology. On the other hand, this design enhances robustness in processing variations by self-adjusting voltage swings. Implementation analysis states that the described mode 6 T 8×8 CAM design utilized fewer MOSFETs than the 8 T 8×8 CAM array.