Zhaoyong Guan*, Fangyu Zhang, Linhui Lv, Chao Jia, Weiyi Wang, Yanyan Jiang, Xingxing Li and Ya Su,
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Mo<i><sub>m</sub></i>S<i><sub>n</sub></i> becomes half-metal (HM) with interlayer FM order after Mo’s self-intercalation, under lower Mo<sub>SI</sub> atom concentrations, independent of the stacking orders. Mo<sub>9</sub>S<sub>16</sub>-AA exhibits HM with FM order, with a corresponding Curie temperature (<i>T</i><sub>c</sub>) of 35 K. Mo<i><sub>m</sub></i>S<i><sub>n</sub></i>-AA and AB stackings with a lower concentration of Mo<sub>SI</sub> atoms transform into half semiconductors (HSCs). Moreover, the magnetic anisotropy energies (MAEs) of Mo<sub>9</sub>S<sub>16</sub>-AA and AB stackings are −0.080 and −1.06 meV/f.u., suggesting that the magnetic easy axis (EA) of Mo<i><sub>m</sub></i>S<i><sub>n</sub></i> tends to the [100] direction, regardless of the stacking orders. However, the MAEs of Mo<i><sub>m</sub></i>S<i><sub>n</sub></i>-AA and AB stackings differ due to variations in the hybridization interaction between Mo’s d orbitals. The formation energies of Mo<i><sub>m</sub></i>S<i><sub>n</sub></i> change with the chemical potential of S (μ<sub>s</sub>) and the concentration of Mo<sub>SI</sub> atoms. Furthermore, the formation energy (ε<sub>f</sub>) monotonically increases as the concentration of Mo<sub>SI</sub> monotonically increases. Additionally, Mo<i><sub>m</sub></i>S<i><sub>n</sub></i> with Mo<sub>SI</sub> atoms could be synthesized under a higher chemical potential of Mo atom (μ<sub>Mo</sub>). The Mo<i><sub>m</sub></i>S<i><sub>n</sub></i>-AB stackings are always more stable than the AA stackings. Self-intercalated Mo<i><sub>m</sub></i>S<i><sub>n</sub></i> exhibits good dynamic and thermal stability at 300 and 600 K, respectively. These findings suggest a promising approach to introducing a modulated long-range FM order and electromagnetic properties into 2H-MoS<sub>2</sub> and other transition metal dichalcogenides (TMDs).</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tailing the Magnetoelectric Properties of 2H-MoS2 by Engineering Covalently Bonded Mo Self-intercalation: Ferromagnetic Materials\",\"authors\":\"Zhaoyong Guan*, Fangyu Zhang, Linhui Lv, Chao Jia, Weiyi Wang, Yanyan Jiang, Xingxing Li and Ya Su, \",\"doi\":\"10.1021/acsaelm.4c00051\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Two-dimensional (2D) intrinsic ferromagnetic (FM) materials play a crucial role in spintronics. Through a systematic research of the 2H-MoS<sub>2</sub> bilayer (BL) with self-intercalation (SI) of Mo atom, we have discovered that SI can introduce a long-range magnetic order, as Mo<sub>SI</sub> atoms lose electrons. The MoS<sub>2</sub> BLs (Mo<i><sub>m</sub></i>S<i><sub>n</sub></i>) with self-intercalated Mo (Mo<sub>SI</sub>) atoms show antiferromagnetic (AFM) order under a high concentration of Mo<sub>SI</sub> atoms, where the direct exchange interaction dominates over the superexchange interaction. Mo<i><sub>m</sub></i>S<i><sub>n</sub></i> becomes half-metal (HM) with interlayer FM order after Mo’s self-intercalation, under lower Mo<sub>SI</sub> atom concentrations, independent of the stacking orders. Mo<sub>9</sub>S<sub>16</sub>-AA exhibits HM with FM order, with a corresponding Curie temperature (<i>T</i><sub>c</sub>) of 35 K. Mo<i><sub>m</sub></i>S<i><sub>n</sub></i>-AA and AB stackings with a lower concentration of Mo<sub>SI</sub> atoms transform into half semiconductors (HSCs). Moreover, the magnetic anisotropy energies (MAEs) of Mo<sub>9</sub>S<sub>16</sub>-AA and AB stackings are −0.080 and −1.06 meV/f.u., suggesting that the magnetic easy axis (EA) of Mo<i><sub>m</sub></i>S<i><sub>n</sub></i> tends to the [100] direction, regardless of the stacking orders. However, the MAEs of Mo<i><sub>m</sub></i>S<i><sub>n</sub></i>-AA and AB stackings differ due to variations in the hybridization interaction between Mo’s d orbitals. The formation energies of Mo<i><sub>m</sub></i>S<i><sub>n</sub></i> change with the chemical potential of S (μ<sub>s</sub>) and the concentration of Mo<sub>SI</sub> atoms. Furthermore, the formation energy (ε<sub>f</sub>) monotonically increases as the concentration of Mo<sub>SI</sub> monotonically increases. Additionally, Mo<i><sub>m</sub></i>S<i><sub>n</sub></i> with Mo<sub>SI</sub> atoms could be synthesized under a higher chemical potential of Mo atom (μ<sub>Mo</sub>). The Mo<i><sub>m</sub></i>S<i><sub>n</sub></i>-AB stackings are always more stable than the AA stackings. Self-intercalated Mo<i><sub>m</sub></i>S<i><sub>n</sub></i> exhibits good dynamic and thermal stability at 300 and 600 K, respectively. 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引用次数: 0
摘要
二维(2D)本征铁磁(FM)材料在自旋电子学中发挥着至关重要的作用。通过对具有自掺杂(SI)Mo 原子的 2H-MoS2 双层(BL)的系统研究,我们发现随着 MoSI 原子失去电子,SI 可以引入长程磁序。具有自掺杂 Mo(MoSI)原子的 MoS2 BLs(MomSn)在高浓度 MoSI 原子的作用下显示出反铁磁性(AFM)秩序,其中直接交换相互作用在超交换相互作用中占主导地位。在较低的 MoSI 原子浓度下,MomSn 在 Mo 的自掺杂后成为半金属(HM),具有层间调频阶,与堆叠阶无关。Mo9S16-AA 显示出具有调频阶的 HM,相应的居里温度 (Tc) 为 35 K。在较低的 MoSI 原子浓度下,MomSn-AA 和 AB 叠层转变为半半导体(HSC)。此外,Mo9S16-AA 和 AB 堆叠体的磁各向异性能(MAEs)分别为-0.080 和-1.06 meV/f.u.,表明无论堆叠阶数如何,MomSn 的磁易轴(EA)都趋向于 [100] 方向。然而,由于 Mo 的 d 轨道之间杂化相互作用的变化,MomSn-AA 和 AB 堆叠的 MAE 有所不同。MomSn 的形成能随 S 的化学势(μs)和 MoSI 原子的浓度而变化。此外,形成能(εf)随着 MoSI 浓度的单调增加而单调增加。此外,在较高的 Mo 原子化学势(μMo)条件下,可以合成含有 MoSI 原子的 MomSn。MomSn-AB 堆积总是比 AA 堆积更稳定。自掺杂 MomSn 在 300 K 和 600 K 下分别表现出良好的动态稳定性和热稳定性。这些发现为在 2H-MoS2 和其他过渡金属二卤化物 (TMD) 中引入调制长程调频秩序和电磁特性提供了一种可行的方法。
Tailing the Magnetoelectric Properties of 2H-MoS2 by Engineering Covalently Bonded Mo Self-intercalation: Ferromagnetic Materials
Two-dimensional (2D) intrinsic ferromagnetic (FM) materials play a crucial role in spintronics. Through a systematic research of the 2H-MoS2 bilayer (BL) with self-intercalation (SI) of Mo atom, we have discovered that SI can introduce a long-range magnetic order, as MoSI atoms lose electrons. The MoS2 BLs (MomSn) with self-intercalated Mo (MoSI) atoms show antiferromagnetic (AFM) order under a high concentration of MoSI atoms, where the direct exchange interaction dominates over the superexchange interaction. MomSn becomes half-metal (HM) with interlayer FM order after Mo’s self-intercalation, under lower MoSI atom concentrations, independent of the stacking orders. Mo9S16-AA exhibits HM with FM order, with a corresponding Curie temperature (Tc) of 35 K. MomSn-AA and AB stackings with a lower concentration of MoSI atoms transform into half semiconductors (HSCs). Moreover, the magnetic anisotropy energies (MAEs) of Mo9S16-AA and AB stackings are −0.080 and −1.06 meV/f.u., suggesting that the magnetic easy axis (EA) of MomSn tends to the [100] direction, regardless of the stacking orders. However, the MAEs of MomSn-AA and AB stackings differ due to variations in the hybridization interaction between Mo’s d orbitals. The formation energies of MomSn change with the chemical potential of S (μs) and the concentration of MoSI atoms. Furthermore, the formation energy (εf) monotonically increases as the concentration of MoSI monotonically increases. Additionally, MomSn with MoSI atoms could be synthesized under a higher chemical potential of Mo atom (μMo). The MomSn-AB stackings are always more stable than the AA stackings. Self-intercalated MomSn exhibits good dynamic and thermal stability at 300 and 600 K, respectively. These findings suggest a promising approach to introducing a modulated long-range FM order and electromagnetic properties into 2H-MoS2 and other transition metal dichalcogenides (TMDs).