通过共价键钼自共价工程实现 2H-MoS2 的磁电特性:铁磁材料

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-06-01 DOI:10.1021/acsaelm.4c00051
Zhaoyong Guan*, Fangyu Zhang, Linhui Lv, Chao Jia, Weiyi Wang, Yanyan Jiang, Xingxing Li and Ya Su, 
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引用次数: 0

摘要

二维(2D)本征铁磁(FM)材料在自旋电子学中发挥着至关重要的作用。通过对具有自掺杂(SI)Mo 原子的 2H-MoS2 双层(BL)的系统研究,我们发现随着 MoSI 原子失去电子,SI 可以引入长程磁序。具有自掺杂 Mo(MoSI)原子的 MoS2 BLs(MomSn)在高浓度 MoSI 原子的作用下显示出反铁磁性(AFM)秩序,其中直接交换相互作用在超交换相互作用中占主导地位。在较低的 MoSI 原子浓度下,MomSn 在 Mo 的自掺杂后成为半金属(HM),具有层间调频阶,与堆叠阶无关。Mo9S16-AA 显示出具有调频阶的 HM,相应的居里温度 (Tc) 为 35 K。在较低的 MoSI 原子浓度下,MomSn-AA 和 AB 叠层转变为半半导体(HSC)。此外,Mo9S16-AA 和 AB 堆叠体的磁各向异性能(MAEs)分别为-0.080 和-1.06 meV/f.u.,表明无论堆叠阶数如何,MomSn 的磁易轴(EA)都趋向于 [100] 方向。然而,由于 Mo 的 d 轨道之间杂化相互作用的变化,MomSn-AA 和 AB 堆叠的 MAE 有所不同。MomSn 的形成能随 S 的化学势(μs)和 MoSI 原子的浓度而变化。此外,形成能(εf)随着 MoSI 浓度的单调增加而单调增加。此外,在较高的 Mo 原子化学势(μMo)条件下,可以合成含有 MoSI 原子的 MomSn。MomSn-AB 堆积总是比 AA 堆积更稳定。自掺杂 MomSn 在 300 K 和 600 K 下分别表现出良好的动态稳定性和热稳定性。这些发现为在 2H-MoS2 和其他过渡金属二卤化物 (TMD) 中引入调制长程调频秩序和电磁特性提供了一种可行的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Tailing the Magnetoelectric Properties of 2H-MoS2 by Engineering Covalently Bonded Mo Self-intercalation: Ferromagnetic Materials

Two-dimensional (2D) intrinsic ferromagnetic (FM) materials play a crucial role in spintronics. Through a systematic research of the 2H-MoS2 bilayer (BL) with self-intercalation (SI) of Mo atom, we have discovered that SI can introduce a long-range magnetic order, as MoSI atoms lose electrons. The MoS2 BLs (MomSn) with self-intercalated Mo (MoSI) atoms show antiferromagnetic (AFM) order under a high concentration of MoSI atoms, where the direct exchange interaction dominates over the superexchange interaction. MomSn becomes half-metal (HM) with interlayer FM order after Mo’s self-intercalation, under lower MoSI atom concentrations, independent of the stacking orders. Mo9S16-AA exhibits HM with FM order, with a corresponding Curie temperature (Tc) of 35 K. MomSn-AA and AB stackings with a lower concentration of MoSI atoms transform into half semiconductors (HSCs). Moreover, the magnetic anisotropy energies (MAEs) of Mo9S16-AA and AB stackings are −0.080 and −1.06 meV/f.u., suggesting that the magnetic easy axis (EA) of MomSn tends to the [100] direction, regardless of the stacking orders. However, the MAEs of MomSn-AA and AB stackings differ due to variations in the hybridization interaction between Mo’s d orbitals. The formation energies of MomSn change with the chemical potential of S (μs) and the concentration of MoSI atoms. Furthermore, the formation energy (εf) monotonically increases as the concentration of MoSI monotonically increases. Additionally, MomSn with MoSI atoms could be synthesized under a higher chemical potential of Mo atom (μMo). The MomSn-AB stackings are always more stable than the AA stackings. Self-intercalated MomSn exhibits good dynamic and thermal stability at 300 and 600 K, respectively. These findings suggest a promising approach to introducing a modulated long-range FM order and electromagnetic properties into 2H-MoS2 and other transition metal dichalcogenides (TMDs).

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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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