Rahmat Hadi Saputro, Tatsuro Maeda, Kaoru Toko, Ryo Matsumura* and Naoki Fukata*,
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引用次数: 0
摘要
锗基材料对于在硅器件中集成第四族光电子技术至关重要。除了拉伸应变之外,高 n 型掺杂也至关重要,因为它能为重组提供丰富的载流子,从而有可能使锗基材料产生更高的光辐射。我们在此报告了载流子密度≥1020 cm-3 的 n-Ge 上创纪录的 68% 掺杂活化率。这项研究的核心是使用高速连续波激光退火(CWLA)技术生长的掺锑 n 型绝缘体锗薄膜,其中含有硅或锡合金。晶体图显示生长出了晶粒直径达 4 μm 的多晶 n-GeSn 和 n-GeSi 薄膜。显微光致发光测量显示,正锗的光致发光强度因锡和硅的合金化而增强,正锗硒和正锗硅的峰值强度分别高出 1.5 倍和 3 倍。在样品中观察到拉曼峰红移和展宽,表明样品具有较高的拉伸应变和 n 型掺杂。测量到的 CWLA 生长薄膜的载流子密度与 PL 强度趋势非常吻合,这表明该工艺有望实现电性改进的 Ge 基薄膜。
High Doping Activation (≥1020 cm–3) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing
Germanium-based materials are essential for the integration of Group IV optoelectronics in silicon devices. In addition to tensile strain, high n-type doping is critical, as it provides abundant carriers for recombination, potentially enabling higher photoemissions from Ge-based materials. We report here record-high 68% doping activation on n-Ge with ≥1020 cm–3 carrier density. This study centers on Sb-doped n-type Ge-on-insulator thin films with Si or Sn alloying grown using high-speed continuous-wave laser annealing (CWLA). Crystal mapping revealed the growth of polycrystalline n-GeSn and n-GeSi thin films with grain sizes up to 4 μm in diameter. Micro-PL measurements showed the PL intensity of n-Ge to be enhanced by the alloying of Sn and Si, with peak intensity 1.5 and 3 times higher for n-GeSn and n-GeSi, respectively. Raman peak red shift and broadening are observed in the samples, indicating high tensile strain and n-type doping. The measured carrier density of CWLA-grown films aligns well with the PL intensity trend, suggesting the process has promise for achieving electrically improved Ge-based thin films.