在金涂层硅衬底上生长的二维(2D)CdSSe 片花结构的场发射:高效冷阴极

IF 4.6 Q2 MATERIALS SCIENCE, BIOMATERIALS ACS Applied Bio Materials Pub Date : 2024-06-10 DOI:10.1002/jemt.24621
Sachin D. Nerkar, Shakeelur Raheman AR, Mohammed K. Al Mesfer, Khursheed B. Ansari, Mohd Shariq Khan, Amol B. Deore, R. R. Attarde
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引用次数: 0

摘要

场发射在众多科学和技术应用中占有重要地位,包括微米和纳米尺度的高分辨率成像、进行高能物理实验、光谱学中的分子电离以及电子用途。人们一直在努力开发用于增强场发射应用的新材料。在本研究中,利用一种简单、经济的化学浴沉积方法,在常温下成功地在金涂层硅衬底上生长出了二维(2D)排列整齐的 CdSSe 片花(CdSSe-FFs)。在优化前驱体浓度、pH 值(约 11)、沉积时间和溶液温度等参数的情况下,观察到了从纳米颗粒到片花的时间依赖性生长机制。高分辨率透射电子显微镜(HRTEM)结果证实了 CdSSe-FFs 的结晶性质,选区电子衍射(SAED)观察结果显示其为六方晶体结构。此外,经 TEM 分析确认,CdSSe-FFs 的厚度约为 20-30 纳米。对其光学、光电和场发射(FE)特性进行了深入探讨,结果表明,由于金涂层硅衬底与 CdSSe-FFs 之间形成异质结,该特性显著增强。CdSSe-FFs 的紫外-可见吸收光谱显示在 700 纳米处吸收增强,对应于 1.77 eV 的能带隙 (Eg)。CdSSe-FFs 具有场发射和光敏场发射(PSFE)特性。在场发射研究中,CdSSe-FFs 在 4.1 V m-1 的外加电场中的电流密度增加了 387.2 μ A cm-2,是无光照时(95.1 μ A cm-2)的 4.08 倍。此外,在 1.5 μA 的预设值下,3 小时内的发射电流稳定性极佳,电流密度偏差分别小于 5%。研究亮点:通过经济有效的化学沉积路线,在金涂层硅衬底上生长出了新型 CdSSe 片花。详细研究了 CdSSe 片花的生长机理。对 CdSSe 片花进行了场发射和光致发光研究。边缘锋利的 CdSSe 片花具有更强的场发射特性。
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Field emission from two-dimensional (2D) CdSSe flake flowers structure grown on gold coated silicon substrate: An efficient cold cathode

Field emission finds a vital space in numerous scientific and technological applications, including high-resolution imaging at micro- and nano-scales, conducting high-energy physics experiments, molecule ionization in spectroscopy, and electronic uses. A continuous effort exists to develop new materials for enhanced field emission applications. In the present work, two-dimensional (2D) well-aligned CdSSe flake flowers (CdSSe-FFs) were successfully grown on gold-coated silicon substrate utilizing a simple and affordable chemical bath deposition approach at ambient temperature. The time-dependent growth mechanism from nanoparticles to FFs was observed at optimized parameters such as concentration of precursors, pH (~11), deposition time, and solution temperature. The crystalline nature of CdSSe-FFs is confirmed by high-resolution transmission electron microscopy (HRTEM) results, and selected area electron diffraction (SAED) observations reveal a hexagonal crystal structure. Additionally, the CdSSe-FFs thickness was confirmed by TEM analysis and found to be ~20–30 nm. The optical, photoelectric, and field emission (FE) characteristics are thoroughly explored which shows significant enhancement due to the formation of heterojunction between the gold-coated silicon substrate and CdSSe-FFs. The UV–visible absorption spectra of CdSSe-FFs show enhanced absorption at 700 nm, corresponding to the energy band gap (Eg) of 1.77 eV. The CdSSe-FFs exhibited field emission and photosensitive field emission (PSFE) characteristics. In FE study CdSSe-FFs shows an increase in current density of 387.2 μ A cm−2 in an applied field of 4.1 V m−1 which is 4.08 fold as compared to without light illumination (95.1 μ A cm−2). Furthermore, it shows excellent emission current stability at the preset value of 1.5 μA over 3 h with a deviation of the current density of less than 5% respectively.

Research Highlights

  • Novel CdSSe flake flowers were grown on Au-coated Si substrate by a cost-effective chemical bath deposition route.
  • The growth mechanism of CdSSe flake flowers is studied in detail.
  • Field emission and Photoluminescence study of CdSSe flake flowers is characterized.
  • CdSSe flake flowers with nanoflakes sharp edges exhibited enhanced field emission properties.
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来源期刊
ACS Applied Bio Materials
ACS Applied Bio Materials Chemistry-Chemistry (all)
CiteScore
9.40
自引率
2.10%
发文量
464
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