Sachin D. Nerkar, Shakeelur Raheman AR, Mohammed K. Al Mesfer, Khursheed B. Ansari, Mohd Shariq Khan, Amol B. Deore, R. R. Attarde
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The time-dependent growth mechanism from nanoparticles to FFs was observed at optimized parameters such as concentration of precursors, pH (~11), deposition time, and solution temperature. The crystalline nature of CdSSe-FFs is confirmed by high-resolution transmission electron microscopy (HRTEM) results, and selected area electron diffraction (SAED) observations reveal a hexagonal crystal structure. Additionally, the CdSSe-FFs thickness was confirmed by TEM analysis and found to be ~20–30 nm. The optical, photoelectric, and field emission (FE) characteristics are thoroughly explored which shows significant enhancement due to the formation of heterojunction between the gold-coated silicon substrate and CdSSe-FFs. The UV–visible absorption spectra of CdSSe-FFs show enhanced absorption at 700 nm, corresponding to the energy band gap (<i>E</i><sub>g</sub>) of 1.77 eV. The CdSSe-FFs exhibited field emission and photosensitive field emission (PSFE) characteristics. In FE study CdSSe-FFs shows an increase in current density of 387.2 μ A cm<sup>−2</sup> in an applied field of 4.1 V m<sup>−1</sup> which is 4.08 fold as compared to without light illumination (95.1 μ A cm<sup>−2</sup>). Furthermore, it shows excellent emission current stability at the preset value of 1.5 μA over 3 h with a deviation of the current density of less than 5% respectively.</p>\n </section>\n \n <section>\n \n <h3> Research Highlights</h3>\n \n <div>\n <ul>\n \n <li>Novel CdSSe flake flowers were grown on Au-coated Si substrate by a cost-effective chemical bath deposition route.</li>\n \n <li>The growth mechanism of CdSSe flake flowers is studied in detail.</li>\n \n <li>Field emission and Photoluminescence study of CdSSe flake flowers is characterized.</li>\n \n <li>CdSSe flake flowers with nanoflakes sharp edges exhibited enhanced field emission properties.</li>\n </ul>\n </div>\n </section>\n </div>","PeriodicalId":18684,"journal":{"name":"Microscopy Research and Technique","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Field emission from two-dimensional (2D) CdSSe flake flowers structure grown on gold coated silicon substrate: An efficient cold cathode\",\"authors\":\"Sachin D. 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引用次数: 0
摘要
场发射在众多科学和技术应用中占有重要地位，包括微米和纳米尺度的高分辨率成像、进行高能物理实验、光谱学中的分子电离以及电子用途。人们一直在努力开发用于增强场发射应用的新材料。在本研究中，利用一种简单、经济的化学浴沉积方法，在常温下成功地在金涂层硅衬底上生长出了二维（2D）排列整齐的 CdSSe 片花（CdSSe-FFs）。在优化前驱体浓度、pH 值（约 11）、沉积时间和溶液温度等参数的情况下，观察到了从纳米颗粒到片花的时间依赖性生长机制。高分辨率透射电子显微镜（HRTEM）结果证实了 CdSSe-FFs 的结晶性质，选区电子衍射（SAED）观察结果显示其为六方晶体结构。此外，经 TEM 分析确认，CdSSe-FFs 的厚度约为 20-30 纳米。对其光学、光电和场发射（FE）特性进行了深入探讨，结果表明，由于金涂层硅衬底与 CdSSe-FFs 之间形成异质结，该特性显著增强。CdSSe-FFs 的紫外-可见吸收光谱显示在 700 纳米处吸收增强，对应于 1.77 eV 的能带隙 (Eg)。CdSSe-FFs 具有场发射和光敏场发射（PSFE）特性。在场发射研究中，CdSSe-FFs 在 4.1 V m-1 的外加电场中的电流密度增加了 387.2 μ A cm-2，是无光照时（95.1 μ A cm-2）的 4.08 倍。此外，在 1.5 μA 的预设值下，3 小时内的发射电流稳定性极佳，电流密度偏差分别小于 5%。研究亮点：通过经济有效的化学沉积路线，在金涂层硅衬底上生长出了新型 CdSSe 片花。详细研究了 CdSSe 片花的生长机理。对 CdSSe 片花进行了场发射和光致发光研究。边缘锋利的 CdSSe 片花具有更强的场发射特性。
Field emission from two-dimensional (2D) CdSSe flake flowers structure grown on gold coated silicon substrate: An efficient cold cathode
Field emission finds a vital space in numerous scientific and technological applications, including high-resolution imaging at micro- and nano-scales, conducting high-energy physics experiments, molecule ionization in spectroscopy, and electronic uses. A continuous effort exists to develop new materials for enhanced field emission applications. In the present work, two-dimensional (2D) well-aligned CdSSe flake flowers (CdSSe-FFs) were successfully grown on gold-coated silicon substrate utilizing a simple and affordable chemical bath deposition approach at ambient temperature. The time-dependent growth mechanism from nanoparticles to FFs was observed at optimized parameters such as concentration of precursors, pH (~11), deposition time, and solution temperature. The crystalline nature of CdSSe-FFs is confirmed by high-resolution transmission electron microscopy (HRTEM) results, and selected area electron diffraction (SAED) observations reveal a hexagonal crystal structure. Additionally, the CdSSe-FFs thickness was confirmed by TEM analysis and found to be ~20–30 nm. The optical, photoelectric, and field emission (FE) characteristics are thoroughly explored which shows significant enhancement due to the formation of heterojunction between the gold-coated silicon substrate and CdSSe-FFs. The UV–visible absorption spectra of CdSSe-FFs show enhanced absorption at 700 nm, corresponding to the energy band gap (Eg) of 1.77 eV. The CdSSe-FFs exhibited field emission and photosensitive field emission (PSFE) characteristics. In FE study CdSSe-FFs shows an increase in current density of 387.2 μ A cm−2 in an applied field of 4.1 V m−1 which is 4.08 fold as compared to without light illumination (95.1 μ A cm−2). Furthermore, it shows excellent emission current stability at the preset value of 1.5 μA over 3 h with a deviation of the current density of less than 5% respectively.
Research Highlights
Novel CdSSe flake flowers were grown on Au-coated Si substrate by a cost-effective chemical bath deposition route.
The growth mechanism of CdSSe flake flowers is studied in detail.
Field emission and Photoluminescence study of CdSSe flake flowers is characterized.
CdSSe flake flowers with nanoflakes sharp edges exhibited enhanced field emission properties.
期刊介绍：
Microscopy Research and Technique (MRT) publishes articles on all aspects of advanced microscopy original architecture and methodologies with applications in the biological, clinical, chemical, and materials sciences. Original basic and applied research as well as technical papers dealing with the various subsets of microscopy are encouraged. MRT is the right form for those developing new microscopy methods or using the microscope to answer key questions in basic and applied research.
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