Hayata Takahata, Tomoaki Kachi, Naoki Hamashima, Ryunosuke Oka, Hisanori Ishiguro, Tetsuya Takeuchi, S. Kamiyama, M. Iwaya, Y. Saito, K. Okuno
{"title":"用于 275 纳米深紫外发光二极管的偏振掺杂 AlxGa1-xN(x = 0.9-0.35)- 梯度层中的空穴生成,带高镁掺杂 Al0.35Ga0.65N 接触层","authors":"Hayata Takahata, Tomoaki Kachi, Naoki Hamashima, Ryunosuke Oka, Hisanori Ishiguro, Tetsuya Takeuchi, S. Kamiyama, M. Iwaya, Y. Saito, K. Okuno","doi":"10.1002/pssa.202400054","DOIUrl":null,"url":null,"abstract":"Herein, hole generation in a 60 nm thick polarization‐doped AlxGa1–xN (x = 0.9–0.35)‐graded layer with some Mg doping (5 × 1018 cm−3) is demonstrated by using a 10 nm thick heavily (1 × 1020 cm−3) Mg‐doped Al0.35Ga0.65N contact layer. First, light emission from a deep‐ultraviolet light‐emitting diode is observed with the AlxGa1–xN (x = 0.9–0.35)‐graded layer and the Al0.35Ga0.65N contact layer, indicating a vertical hole transport from the Al0.35Ga0.65N contact layer to the active region through the polarization‐doped AlGaN‐graded layer. Second, hole concentration, mobility, and resistivity values of the AlxGa1–xN (x = 0.9–0.35)‐graded layer and the Al0.35Ga0.65N contact layer are evaluated by Hall effect measurement. A hole concentration of 1.8 × 1018 cm−3 is clearly observed by removing the AlGaN contact layer (not underneath of electrodes) to minimize a parallel conduction. The hole concentration shows a very weak temperature dependence from room temperature down to 150 K, suggesting that the holes are generated by polarization doping. Hole generation in the fully strained AlxGa1–xN (x = 0.9–0.35)‐graded layer is directly evaluated by Hall effect measurement with the AlGaN contact layer just underneath the electrodes.","PeriodicalId":20150,"journal":{"name":"physica status solidi (a)","volume":"60 9","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Hole Generation in Polarization‐Doped AlxGa1–xN (x = 0.9–0.35)‐Graded Layer with Heavily Mg‐Doped Al0.35Ga0.65N Contact Layer for 275 nm Deep‐Ultraviolet Light‐Emitting Diode\",\"authors\":\"Hayata Takahata, Tomoaki Kachi, Naoki Hamashima, Ryunosuke Oka, Hisanori Ishiguro, Tetsuya Takeuchi, S. Kamiyama, M. Iwaya, Y. Saito, K. Okuno\",\"doi\":\"10.1002/pssa.202400054\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Herein, hole generation in a 60 nm thick polarization‐doped AlxGa1–xN (x = 0.9–0.35)‐graded layer with some Mg doping (5 × 1018 cm−3) is demonstrated by using a 10 nm thick heavily (1 × 1020 cm−3) Mg‐doped Al0.35Ga0.65N contact layer. First, light emission from a deep‐ultraviolet light‐emitting diode is observed with the AlxGa1–xN (x = 0.9–0.35)‐graded layer and the Al0.35Ga0.65N contact layer, indicating a vertical hole transport from the Al0.35Ga0.65N contact layer to the active region through the polarization‐doped AlGaN‐graded layer. Second, hole concentration, mobility, and resistivity values of the AlxGa1–xN (x = 0.9–0.35)‐graded layer and the Al0.35Ga0.65N contact layer are evaluated by Hall effect measurement. A hole concentration of 1.8 × 1018 cm−3 is clearly observed by removing the AlGaN contact layer (not underneath of electrodes) to minimize a parallel conduction. The hole concentration shows a very weak temperature dependence from room temperature down to 150 K, suggesting that the holes are generated by polarization doping. Hole generation in the fully strained AlxGa1–xN (x = 0.9–0.35)‐graded layer is directly evaluated by Hall effect measurement with the AlGaN contact layer just underneath the electrodes.\",\"PeriodicalId\":20150,\"journal\":{\"name\":\"physica status solidi (a)\",\"volume\":\"60 9\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"physica status solidi (a)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/pssa.202400054\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"physica status solidi (a)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/pssa.202400054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hole Generation in Polarization‐Doped AlxGa1–xN (x = 0.9–0.35)‐Graded Layer with Heavily Mg‐Doped Al0.35Ga0.65N Contact Layer for 275 nm Deep‐Ultraviolet Light‐Emitting Diode
Herein, hole generation in a 60 nm thick polarization‐doped AlxGa1–xN (x = 0.9–0.35)‐graded layer with some Mg doping (5 × 1018 cm−3) is demonstrated by using a 10 nm thick heavily (1 × 1020 cm−3) Mg‐doped Al0.35Ga0.65N contact layer. First, light emission from a deep‐ultraviolet light‐emitting diode is observed with the AlxGa1–xN (x = 0.9–0.35)‐graded layer and the Al0.35Ga0.65N contact layer, indicating a vertical hole transport from the Al0.35Ga0.65N contact layer to the active region through the polarization‐doped AlGaN‐graded layer. Second, hole concentration, mobility, and resistivity values of the AlxGa1–xN (x = 0.9–0.35)‐graded layer and the Al0.35Ga0.65N contact layer are evaluated by Hall effect measurement. A hole concentration of 1.8 × 1018 cm−3 is clearly observed by removing the AlGaN contact layer (not underneath of electrodes) to minimize a parallel conduction. The hole concentration shows a very weak temperature dependence from room temperature down to 150 K, suggesting that the holes are generated by polarization doping. Hole generation in the fully strained AlxGa1–xN (x = 0.9–0.35)‐graded layer is directly evaluated by Hall effect measurement with the AlGaN contact layer just underneath the electrodes.