Yongjun Cho , Bo Soo Kang , Pankaj Kumbhare , Romain Delhougne , Laura Nyns , Ming Mao , Ludovic Goux , Gouri Sankar Kar , Attilio Belmonte
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Switching layer optimization in Co-based CBRAM for >105 memory window in sub-100 µA regime
Co/HfO2-based CBRAM stacks are optimized to enlarge the memory window for low-current (50 µA) operation. First, we dope the switching layer with Si to decrease the pristine current, thus enlarging the memory window. Then, we reduce the forming voltage by scaling the Si-doped HfO2 thickness. Finally, we extend the endurance lifetime and reduce the write time by introducing a hygroscopic oxide, LaSiO, in combination with HfSiO, to enhance Co ion hopping through hydroxyl groups. We further outline the important role of the position of the hygroscopic layer with respect to the Co active electrode in enlarging the memory window of the CBRAM device up to > 105.
期刊介绍：
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.
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