{"title":"具有高波长漂移容差的高速高灵敏度多光束干涉仪辅助 SOA-PIN 光电探测器","authors":"Yulan Zhou;Jia Zhao;Xun Li","doi":"10.1109/JQE.2024.3415162","DOIUrl":null,"url":null,"abstract":"In this work, we have proposed a multi-beam-interferometer-assistant SOA-PIN (MBIA-SOA-PIN) photodetector aiming at achieving a high sensitivity and a high wavelength drift tolerance by reducing the SOA’s amplified spontaneous emission (ASE) noise through a finite impulse response (FIR)-type filter. Our simulation results show that the MBIA-SOA-PIN photodetector has a wavelength drift tolerance of ±1.92 nm, and a sensitivity of -18.2 dBm at a bit-error-rate (BER) of 10-12 under a data rate of 240 Gbps. Compared with the GA-SOA-PIN photodetector which has the best performance among various types of photodetectors ever reported, the MBIA-SOA-PIN photodetector improves the wavelength drift tolerance and reduces the sensitivity dependence on polarization, at the trade-off of slightly lowering the sensitivity for TE polarized signals.","PeriodicalId":13200,"journal":{"name":"IEEE Journal of Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A High-Speed High-Sensitivity Multi-Beam- Interferometer-Assistant SOA-PIN Photodetector With High Wavelength Drift Tolerance\",\"authors\":\"Yulan Zhou;Jia Zhao;Xun Li\",\"doi\":\"10.1109/JQE.2024.3415162\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we have proposed a multi-beam-interferometer-assistant SOA-PIN (MBIA-SOA-PIN) photodetector aiming at achieving a high sensitivity and a high wavelength drift tolerance by reducing the SOA’s amplified spontaneous emission (ASE) noise through a finite impulse response (FIR)-type filter. Our simulation results show that the MBIA-SOA-PIN photodetector has a wavelength drift tolerance of ±1.92 nm, and a sensitivity of -18.2 dBm at a bit-error-rate (BER) of 10-12 under a data rate of 240 Gbps. Compared with the GA-SOA-PIN photodetector which has the best performance among various types of photodetectors ever reported, the MBIA-SOA-PIN photodetector improves the wavelength drift tolerance and reduces the sensitivity dependence on polarization, at the trade-off of slightly lowering the sensitivity for TE polarized signals.\",\"PeriodicalId\":13200,\"journal\":{\"name\":\"IEEE Journal of Quantum Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10559484/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10559484/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
在这项工作中，我们提出了一种多光束干涉仪辅助 SOA-PIN （MBIA-SOA-PIN）光电探测器，旨在通过有限脉冲响应（FIR）型滤波器降低 SOA 的放大自发辐射（ASE）噪声，从而实现高灵敏度和高波长漂移容差。我们的仿真结果表明，MBIA-SOA-PIN 光电探测器的波长漂移容差为±1.92 nm，在数据速率为 240 Gbps 时，误码率（BER）为 10-12 时的灵敏度为-18.2 dBm。GA-SOA-PIN 光电探测器在各种类型的光电探测器中性能最好，与之相比，MBIA-SOA-PIN 光电探测器提高了波长漂移容限，降低了灵敏度对极化的依赖性，但同时也略微降低了对 TE 极化信号的灵敏度。
A High-Speed High-Sensitivity Multi-Beam- Interferometer-Assistant SOA-PIN Photodetector With High Wavelength Drift Tolerance
In this work, we have proposed a multi-beam-interferometer-assistant SOA-PIN (MBIA-SOA-PIN) photodetector aiming at achieving a high sensitivity and a high wavelength drift tolerance by reducing the SOA’s amplified spontaneous emission (ASE) noise through a finite impulse response (FIR)-type filter. Our simulation results show that the MBIA-SOA-PIN photodetector has a wavelength drift tolerance of ±1.92 nm, and a sensitivity of -18.2 dBm at a bit-error-rate (BER) of 10-12 under a data rate of 240 Gbps. Compared with the GA-SOA-PIN photodetector which has the best performance among various types of photodetectors ever reported, the MBIA-SOA-PIN photodetector improves the wavelength drift tolerance and reduces the sensitivity dependence on polarization, at the trade-off of slightly lowering the sensitivity for TE polarized signals.
期刊介绍：
The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.
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