{"title":"线圈频率对碳化硅单晶顶籽溶液生长过程中碳迁移的影响","authors":"Yuhui Liu, Mengyu Li, Zhaoyang Yan, Xiaofang Qi, Wencheng Ma, Jianli Chen, Yongkuan Xu, Zhanggui Hu","doi":"10.1016/j.jcrysgro.2024.127801","DOIUrl":null,"url":null,"abstract":"<div><p>The flow pattern and carbon transport in the solution for the solution growth of silicon carbide (SiC) in an induction-heating system can be effectively controlled by adjusting the coil frequency to obtain a relatively uniform distribution of growth rate. In this paper, a global heat and mass transfer model was first verified by the SiC crystal growth experiment results at the coil frequency of 8 kHz. Then, the influence of coil frequency on the fluid flow, carbon concentration, and growth rate for the growth of SiC crystals was numerically investigated. The results indicated that electromagnetic convection (at low frequencies) greatly enhances the upward convection beneath the crystal and weakens the adverse effects of Marangoni convection, resulting in a uniform distribution of radial temperature along the growth interface. Consequently, the carbon transport from the crucible wall to the crystal center is strengthened, leading to a uniform region of high carbon supersaturation with a lower coil frequency. The optimal radial uniformity of the growth rate along the growth interface is achieved at the coil frequency of 3 kHz.</p></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":null,"pages":null},"PeriodicalIF":1.7000,"publicationDate":"2024-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of coil frequency on the carbon transport in the top-seeded solution growth of SiC single crystal\",\"authors\":\"Yuhui Liu, Mengyu Li, Zhaoyang Yan, Xiaofang Qi, Wencheng Ma, Jianli Chen, Yongkuan Xu, Zhanggui Hu\",\"doi\":\"10.1016/j.jcrysgro.2024.127801\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The flow pattern and carbon transport in the solution for the solution growth of silicon carbide (SiC) in an induction-heating system can be effectively controlled by adjusting the coil frequency to obtain a relatively uniform distribution of growth rate. In this paper, a global heat and mass transfer model was first verified by the SiC crystal growth experiment results at the coil frequency of 8 kHz. Then, the influence of coil frequency on the fluid flow, carbon concentration, and growth rate for the growth of SiC crystals was numerically investigated. The results indicated that electromagnetic convection (at low frequencies) greatly enhances the upward convection beneath the crystal and weakens the adverse effects of Marangoni convection, resulting in a uniform distribution of radial temperature along the growth interface. Consequently, the carbon transport from the crucible wall to the crystal center is strengthened, leading to a uniform region of high carbon supersaturation with a lower coil frequency. The optimal radial uniformity of the growth rate along the growth interface is achieved at the coil frequency of 3 kHz.</p></div>\",\"PeriodicalId\":353,\"journal\":{\"name\":\"Journal of Crystal Growth\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.7000,\"publicationDate\":\"2024-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Crystal Growth\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022024824002367\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024824002367","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
摘要
在感应加热系统中进行碳化硅(SiC)溶液生长时,溶液中的流动模式和碳传输可通过调节线圈频率得到有效控制,从而获得相对均匀的生长率分布。本文首先通过 8 kHz 线圈频率下 SiC 晶体生长实验结果验证了全局传热和传质模型。然后,对 SiC 晶体生长过程中线圈频率对流体流动、碳浓度和生长率的影响进行了数值研究。结果表明,电磁对流(低频)大大增强了晶体下方的向上对流,减弱了马兰戈尼对流的不利影响,从而导致沿生长界面的径向温度分布均匀。因此,从坩埚壁到晶体中心的碳传输得到加强,从而以较低的线圈频率形成均匀的高碳过饱和区域。当线圈频率为 3 kHz 时,沿生长界面的生长率达到最佳径向均匀性。
Effects of coil frequency on the carbon transport in the top-seeded solution growth of SiC single crystal
The flow pattern and carbon transport in the solution for the solution growth of silicon carbide (SiC) in an induction-heating system can be effectively controlled by adjusting the coil frequency to obtain a relatively uniform distribution of growth rate. In this paper, a global heat and mass transfer model was first verified by the SiC crystal growth experiment results at the coil frequency of 8 kHz. Then, the influence of coil frequency on the fluid flow, carbon concentration, and growth rate for the growth of SiC crystals was numerically investigated. The results indicated that electromagnetic convection (at low frequencies) greatly enhances the upward convection beneath the crystal and weakens the adverse effects of Marangoni convection, resulting in a uniform distribution of radial temperature along the growth interface. Consequently, the carbon transport from the crucible wall to the crystal center is strengthened, leading to a uniform region of high carbon supersaturation with a lower coil frequency. The optimal radial uniformity of the growth rate along the growth interface is achieved at the coil frequency of 3 kHz.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.