Yingyu Guo, Zhongqiang Chen, Zuanming Jin, Xuefeng Wang, Chao Zhang, Alexey V. Balakin, Alexander P. Shkurinov, Yan Peng, Yiming Zhu, Songlin Zhuang
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引用次数: 0
摘要
太赫兹(THz)电磁干扰(EMI)屏蔽材料对于确保太赫兹电磁防护和信息保密技术至关重要。本文研究表明,II型狄拉克半金属PdTe2薄膜具有高导电性和对太赫兹电磁辐射的强吸收性,是一种很有前途的电磁干扰屏蔽材料。与常用的金属二维材料 MXene 薄膜相比,PdTe2 薄膜在宽带太赫兹频率范围内的单位厚度平均 EMI 屏蔽效率显著提高了 40.36%。此外,研究还证明,在狄拉克半金属 PdTe2 薄膜中,光诱导的长寿命太赫兹透明度归因于强电子-声子耦合形成的小极子。15 nm 厚的 PdTe2 薄膜在光诱导下显示出 1.1 dB 的 EMI SE 变化,这个值是在 MXene 薄膜上类似泵浦通量测量值的三倍多。这项研究深入揭示了 II 型狄拉克半金属的基本光电载体特性,这对于设计先进的太赫兹光电器件至关重要。
Dynamically Controllable Terahertz Electromagnetic Interference Shielding by Small Polaron Responses in Dirac Semimetal PdTe2 Thin Films
Terahertz (THz) electromagnetic interference (EMI) shielding materials is crucial for ensuring THz electromagnetic protection and information confidentiality technology. Here, it is demonstrated that high electrical conductivity and strong absorption of THz electromagnetic radiation by type‐II Dirac semimetal PdTe2 film make it a promising material for EMI shielding. Compared to MXene film, a commonly used metallic 2D material, the PdTe2 film demonstrates a remarkable 40.36% increase in average EMI shielding efficiency per unit thickness within a broadband THz frequency range. Furthermore, it is demonstrated that a photoinduced long life‐time THz transparency in Dirac semimetal PdTe2 films is attributed to the formation of small polarons due to the strong electron‐phonon coupling. A 15 nm‐thick PdTe2 film exhibits a photoinduced change of EMI SE of 1.1 dB, a value exceeding three times that measured on MXene film with a similar pump fluence. This work provides insights into the fundamental photocarrier properties in type‐II Dirac semimetals that are essential for designing advanced THz optoelectronic devices.
期刊介绍:
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