Ketong Yang, Minhyun Jung, Taeseung Jung, Jae Seok Yoon, Junghyeon Hwang, Hunbeom Shin, Seungyeob Kim, Chaeheon Kim, Sanghun Jeon
{"title":"释放哈夫纳铁电的潜能:在极高频等离子体增强原子层沉积中通过等离子体频率调制实现高可靠性","authors":"Ketong Yang, Minhyun Jung, Taeseung Jung, Jae Seok Yoon, Junghyeon Hwang, Hunbeom Shin, Seungyeob Kim, Chaeheon Kim, Sanghun Jeon","doi":"10.1021/acsaelm.4c00630","DOIUrl":null,"url":null,"abstract":"Hafnia ferroelectrics are gaining significance in nonvolatile memory, logic devices, and neuromorphic computing because of their rapid switching speed, exceptional reliability, and low-voltage operations. In addition, it demonstrates exceptional process compatibility with advanced thin film techniques such as atomic layer deposition (ALD). Conventical radio frequency (RF) plasma-enhanced (PE) ALD offers various advantages including enhanced reaction rates, improved film characteristics, and a lower process temperature. However, the inevitable plasma damages and interfacial defects that occur as a result of the RF PE-ALD process have a major impact on the polarization hysteresis features of hafnia ferroelectrics. In our study, we fabricated a Hf<sub>0.5</sub> Zr<sub>0.5</sub>O<sub>2</sub> (HZO) film utilizing a very high frequency (VHF) (∼100 MHz) PEALD. This approach demonstrated greater effectiveness in radical reactions and efficiently mitigated plasma-induced damage in the HZO film. The utilization of high-frequency plasma enhances stability and exhibits excellent ferroelectric characteristics. Specifically, it led to an increase in the interfacial capacitance, a decrease in the wake-up effect, and a reduction in the proportion of suboxide in HZO films. Our observations revealed exceptional switching speed (60 ns) and outstanding reliability (10<sup>10</sup> cycles) along with a retention rate of 94% over a span of 10 years at a temperature of 85 °C. The research demonstrates that VHF PE-ALD is a viable method for creating hafnia thin films with reduced defects at the interface.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Unlocking the Potential of Hafnia Ferroelectrics: Achieving High Reliability via Plasma Frequency Modulation in Very High-Frequency Plasma-Enhanced Atomic Layer Deposition\",\"authors\":\"Ketong Yang, Minhyun Jung, Taeseung Jung, Jae Seok Yoon, Junghyeon Hwang, Hunbeom Shin, Seungyeob Kim, Chaeheon Kim, Sanghun Jeon\",\"doi\":\"10.1021/acsaelm.4c00630\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hafnia ferroelectrics are gaining significance in nonvolatile memory, logic devices, and neuromorphic computing because of their rapid switching speed, exceptional reliability, and low-voltage operations. In addition, it demonstrates exceptional process compatibility with advanced thin film techniques such as atomic layer deposition (ALD). Conventical radio frequency (RF) plasma-enhanced (PE) ALD offers various advantages including enhanced reaction rates, improved film characteristics, and a lower process temperature. However, the inevitable plasma damages and interfacial defects that occur as a result of the RF PE-ALD process have a major impact on the polarization hysteresis features of hafnia ferroelectrics. In our study, we fabricated a Hf<sub>0.5</sub> Zr<sub>0.5</sub>O<sub>2</sub> (HZO) film utilizing a very high frequency (VHF) (∼100 MHz) PEALD. This approach demonstrated greater effectiveness in radical reactions and efficiently mitigated plasma-induced damage in the HZO film. The utilization of high-frequency plasma enhances stability and exhibits excellent ferroelectric characteristics. Specifically, it led to an increase in the interfacial capacitance, a decrease in the wake-up effect, and a reduction in the proportion of suboxide in HZO films. Our observations revealed exceptional switching speed (60 ns) and outstanding reliability (10<sup>10</sup> cycles) along with a retention rate of 94% over a span of 10 years at a temperature of 85 °C. The research demonstrates that VHF PE-ALD is a viable method for creating hafnia thin films with reduced defects at the interface.\",\"PeriodicalId\":3,\"journal\":{\"name\":\"ACS Applied Electronic Materials\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1021/acsaelm.4c00630\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsaelm.4c00630","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Unlocking the Potential of Hafnia Ferroelectrics: Achieving High Reliability via Plasma Frequency Modulation in Very High-Frequency Plasma-Enhanced Atomic Layer Deposition
Hafnia ferroelectrics are gaining significance in nonvolatile memory, logic devices, and neuromorphic computing because of their rapid switching speed, exceptional reliability, and low-voltage operations. In addition, it demonstrates exceptional process compatibility with advanced thin film techniques such as atomic layer deposition (ALD). Conventical radio frequency (RF) plasma-enhanced (PE) ALD offers various advantages including enhanced reaction rates, improved film characteristics, and a lower process temperature. However, the inevitable plasma damages and interfacial defects that occur as a result of the RF PE-ALD process have a major impact on the polarization hysteresis features of hafnia ferroelectrics. In our study, we fabricated a Hf0.5 Zr0.5O2 (HZO) film utilizing a very high frequency (VHF) (∼100 MHz) PEALD. This approach demonstrated greater effectiveness in radical reactions and efficiently mitigated plasma-induced damage in the HZO film. The utilization of high-frequency plasma enhances stability and exhibits excellent ferroelectric characteristics. Specifically, it led to an increase in the interfacial capacitance, a decrease in the wake-up effect, and a reduction in the proportion of suboxide in HZO films. Our observations revealed exceptional switching speed (60 ns) and outstanding reliability (1010 cycles) along with a retention rate of 94% over a span of 10 years at a temperature of 85 °C. The research demonstrates that VHF PE-ALD is a viable method for creating hafnia thin films with reduced defects at the interface.