基于掺杂 TiO2 的碳纳米片薄膜的直接制备柔性光电探测器

IF 2 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of the Electron Devices Society Pub Date : 2024-07-02 DOI:10.1109/JEDS.2024.3422292
Yunlong Zhang;Xiaolin Li;Zhipeng Cao;Qiang Wu;Gong Chen;Bo Wen;Dongfeng Diao;Xi Zhang
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引用次数: 0

摘要

柔性光电探测器对于智能工业应用至关重要。然而,光敏材料通常需要在高温下生长,然后转移到柔性衬底上。本文报道了一种基于掺杂 TiO2 的石墨烯纳米片嵌入碳(GNEC)薄膜直接制作的柔性光电探测器。利用电子回旋共振(ECR)系统在聚酰亚胺基底上原位沉积掺杂 TiO2 的 GNEC 薄膜,然后用 N719 染料敏化,制备出 TiO2@GNEC 光电探测器。GNEC 薄膜含有垂直排列的石墨烯纳米片 (GN),它们呈现出高密度边缘态。边缘态抑制了光生电子-空穴对的重组率,从而显著提高了光响应性能。该光电探测器的光响应率高达 0.82 mA/W,响应时间为 1.93 秒。由于 ECR 系统具有原位制造能力,可避免二次材料转移造成的缺陷,因此光电探测器阵列具有出色的一致性,可清晰识别平面和弯曲状态下的光型。
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Directly Fabricated Flexible Photodetector Based on TiO₂-Doped Carbon Nanosheets Film
Flexible photodetector is crucial for the intelligent industrial applications. However, the optical-sensitive materials are usually grown in a high temperature and then transferred onto the flexible substrate. This paper reported a directly fabricated flexible photodetector based on TiO2-doped Graphene Nanosheets Embedded Carbon (GNEC)film. An Electron Cyclotron Resonance (ECR) system was employed to in-situ deposit TiO2-doped GNEC film on a polyimide substrate, which were subsequently sensitized with N719 dye to fabricate the TiO2@GNEC photodetector. The GNEC film contains vertically aligned Graphene Nanosheets (GNs), which exhibit high-density edge states. The edge states suppress the recombination rate of photo-generated electron-hole pairs, thereby significantly enhancing the photo-responsive performance. The photodetector demonstrates a high photo responsivity of 0.82 mA/W and a response time of 1.93 seconds. Due to the in-situ manufacturing capabilities of the ECR system, which avoids defects from secondary material transfers, the photodetector array exhibits excellent consistency and achieves clear recognition of light patterns in both flat and bent states.
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来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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