{"title":"氮和硅的掺杂/双掺杂对石墨烯结构、电子和光学特性的影响:第一原理研究","authors":"Marouane Archi, Mohamed Al-hattab, Omar Bajjou, Lhouceine Moulaoui, Khalid Rahmani, Benachir Elhadadi","doi":"10.1007/s11051-024-06056-6","DOIUrl":null,"url":null,"abstract":"<p>In this study, the structural, electronic, and optical properties of pristine graphene and graphene doped/co-doped with (N, Si) atoms are examined using a first-principles investigation. However, pristine graphene is characterized by a unique electronic structure known as the zero band gap (Eg = 0 eV), and this gap was opened up after the addition of N and Si substitutions, where it became 0.2, 0.21, and 1.38 eV for graphene doped with nitrogen, silicon and double doped with both (N, Si), respectively. For the band gap and the density of states, many parameters have been studied such as the complex dielectric function, conductivity, absorption spectra, loss function, and refractive index. The absorption curve shows two sharp peaks for all structures, where their intensities become lower and shift slightly towards lower energy after doping graphene with N, Si, and N-Si, indicating that this doping introduces additional energy states in the graphene band structure, making the transition between states easier to achieve.</p>","PeriodicalId":653,"journal":{"name":"Journal of Nanoparticle Research","volume":null,"pages":null},"PeriodicalIF":2.1000,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The effect of doping/dual-doping with nitrogen and silicon on the structural, electronic, and optical properties of graphene: first-principles study\",\"authors\":\"Marouane Archi, Mohamed Al-hattab, Omar Bajjou, Lhouceine Moulaoui, Khalid Rahmani, Benachir Elhadadi\",\"doi\":\"10.1007/s11051-024-06056-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>In this study, the structural, electronic, and optical properties of pristine graphene and graphene doped/co-doped with (N, Si) atoms are examined using a first-principles investigation. However, pristine graphene is characterized by a unique electronic structure known as the zero band gap (Eg = 0 eV), and this gap was opened up after the addition of N and Si substitutions, where it became 0.2, 0.21, and 1.38 eV for graphene doped with nitrogen, silicon and double doped with both (N, Si), respectively. For the band gap and the density of states, many parameters have been studied such as the complex dielectric function, conductivity, absorption spectra, loss function, and refractive index. The absorption curve shows two sharp peaks for all structures, where their intensities become lower and shift slightly towards lower energy after doping graphene with N, Si, and N-Si, indicating that this doping introduces additional energy states in the graphene band structure, making the transition between states easier to achieve.</p>\",\"PeriodicalId\":653,\"journal\":{\"name\":\"Journal of Nanoparticle Research\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2024-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Nanoparticle Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1007/s11051-024-06056-6\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Nanoparticle Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1007/s11051-024-06056-6","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
The effect of doping/dual-doping with nitrogen and silicon on the structural, electronic, and optical properties of graphene: first-principles study
In this study, the structural, electronic, and optical properties of pristine graphene and graphene doped/co-doped with (N, Si) atoms are examined using a first-principles investigation. However, pristine graphene is characterized by a unique electronic structure known as the zero band gap (Eg = 0 eV), and this gap was opened up after the addition of N and Si substitutions, where it became 0.2, 0.21, and 1.38 eV for graphene doped with nitrogen, silicon and double doped with both (N, Si), respectively. For the band gap and the density of states, many parameters have been studied such as the complex dielectric function, conductivity, absorption spectra, loss function, and refractive index. The absorption curve shows two sharp peaks for all structures, where their intensities become lower and shift slightly towards lower energy after doping graphene with N, Si, and N-Si, indicating that this doping introduces additional energy states in the graphene band structure, making the transition between states easier to achieve.
期刊介绍:
The objective of the Journal of Nanoparticle Research is to disseminate knowledge of the physical, chemical and biological phenomena and processes in structures that have at least one lengthscale ranging from molecular to approximately 100 nm (or submicron in some situations), and exhibit improved and novel properties that are a direct result of their small size.
Nanoparticle research is a key component of nanoscience, nanoengineering and nanotechnology.
The focus of the Journal is on the specific concepts, properties, phenomena, and processes related to particles, tubes, layers, macromolecules, clusters and other finite structures of the nanoscale size range. Synthesis, assembly, transport, reactivity, and stability of such structures are considered. Development of in-situ and ex-situ instrumentation for characterization of nanoparticles and their interfaces should be based on new principles for probing properties and phenomena not well understood at the nanometer scale. Modeling and simulation may include atom-based quantum mechanics; molecular dynamics; single-particle, multi-body and continuum based models; fractals; other methods suitable for modeling particle synthesis, assembling and interaction processes. Realization and application of systems, structures and devices with novel functions obtained via precursor nanoparticles is emphasized. Approaches may include gas-, liquid-, solid-, and vacuum-based processes, size reduction, chemical- and bio-self assembly. Contributions include utilization of nanoparticle systems for enhancing a phenomenon or process and particle assembling into hierarchical structures, as well as formulation and the administration of drugs. Synergistic approaches originating from different disciplines and technologies, and interaction between the research providers and users in this field, are encouraged.