在高电场和高磁场条件下,制作由表面熔融硅晶片生长而成的带有刻面顶点的尖锐硅突起:应用于场发射电子源

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, APPLIED Japanese Journal of Applied Physics Pub Date : 2024-06-16 DOI:10.35848/1347-4065/ad50b4
Takashi Nishimura and Masahiko Tomitori
{"title":"在高电场和高磁场条件下,制作由表面熔融硅晶片生长而成的带有刻面顶点的尖锐硅突起:应用于场发射电子源","authors":"Takashi Nishimura and Masahiko Tomitori","doi":"10.35848/1347-4065/ad50b4","DOIUrl":null,"url":null,"abstract":"A silicon (Si) protrusion, grown on a narrow path of a Si(001) wafer by surface melting via resistive heating, was sharpened by applying a local high electric field under a magnetic field during the growth. The electric field caused local stress to the surface-melted Si, which was pulled upward along the field. Consequently, the melted Si formed a sharper protrusion on solidification, with an apex surrounded by {001}, {113}, and {111} facets. The field emission from the protrusions was measured. The onset voltage of the emission from protrusions was lower when they were grown under the electric field. We used Fowler–Nordheim plots to characterize the emission current and voltage conversion factor, β. The results indicated that the application of electric field is beneficial to sharpening Si protrusions grown from Si melt. Such protrusions surrounded by facets are suitable for field emission electron sources with a high local electric field.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2024-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication of a sharp Si protrusion with a faceted apex grown from a surface-melted silicon wafer under high electric and magnetic fields: application to field emission electron sources\",\"authors\":\"Takashi Nishimura and Masahiko Tomitori\",\"doi\":\"10.35848/1347-4065/ad50b4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A silicon (Si) protrusion, grown on a narrow path of a Si(001) wafer by surface melting via resistive heating, was sharpened by applying a local high electric field under a magnetic field during the growth. The electric field caused local stress to the surface-melted Si, which was pulled upward along the field. Consequently, the melted Si formed a sharper protrusion on solidification, with an apex surrounded by {001}, {113}, and {111} facets. The field emission from the protrusions was measured. The onset voltage of the emission from protrusions was lower when they were grown under the electric field. We used Fowler–Nordheim plots to characterize the emission current and voltage conversion factor, β. The results indicated that the application of electric field is beneficial to sharpening Si protrusions grown from Si melt. Such protrusions surrounded by facets are suitable for field emission electron sources with a high local electric field.\",\"PeriodicalId\":14741,\"journal\":{\"name\":\"Japanese Journal of Applied Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Japanese Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1347-4065/ad50b4\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad50b4","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

摘要

硅(Si)突起是通过电阻加热的表面熔化法在硅(001)晶片的狭窄路径上生长出来的,在生长过程中,通过在磁场下施加局部高电场,使硅突起变得尖锐。电场对表面熔化的硅造成局部应力,使其沿着电场向上拉。因此,熔化的硅在凝固时形成了更尖锐的突起,其顶点被{001}、{113}和{111}面包围。测量了突起的场发射。当突起在电场下生长时,突起的发射起始电压较低。我们使用 Fowler-Nordheim 图来描述发射电流和电压转换系数 β。 结果表明,施加电场有利于锐化从硅熔体中生长出来的硅突起。这种由刻面包围的突起适用于具有高局部电场的场发射电子源。
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Fabrication of a sharp Si protrusion with a faceted apex grown from a surface-melted silicon wafer under high electric and magnetic fields: application to field emission electron sources
A silicon (Si) protrusion, grown on a narrow path of a Si(001) wafer by surface melting via resistive heating, was sharpened by applying a local high electric field under a magnetic field during the growth. The electric field caused local stress to the surface-melted Si, which was pulled upward along the field. Consequently, the melted Si formed a sharper protrusion on solidification, with an apex surrounded by {001}, {113}, and {111} facets. The field emission from the protrusions was measured. The onset voltage of the emission from protrusions was lower when they were grown under the electric field. We used Fowler–Nordheim plots to characterize the emission current and voltage conversion factor, β. The results indicated that the application of electric field is beneficial to sharpening Si protrusions grown from Si melt. Such protrusions surrounded by facets are suitable for field emission electron sources with a high local electric field.
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来源期刊
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics 物理-物理:应用
CiteScore
3.00
自引率
26.70%
发文量
818
审稿时长
3.5 months
期刊介绍: The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP). JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields: • Semiconductors, dielectrics, and organic materials • Photonics, quantum electronics, optics, and spectroscopy • Spintronics, superconductivity, and strongly correlated materials • Device physics including quantum information processing • Physics-based circuits and systems • Nanoscale science and technology • Crystal growth, surfaces, interfaces, thin films, and bulk materials • Plasmas, applied atomic and molecular physics, and applied nuclear physics • Device processing, fabrication and measurement technologies, and instrumentation • Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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