{"title":"在高电场和高磁场条件下,制作由表面熔融硅晶片生长而成的带有刻面顶点的尖锐硅突起:应用于场发射电子源","authors":"Takashi Nishimura and Masahiko Tomitori","doi":"10.35848/1347-4065/ad50b4","DOIUrl":null,"url":null,"abstract":"A silicon (Si) protrusion, grown on a narrow path of a Si(001) wafer by surface melting via resistive heating, was sharpened by applying a local high electric field under a magnetic field during the growth. The electric field caused local stress to the surface-melted Si, which was pulled upward along the field. Consequently, the melted Si formed a sharper protrusion on solidification, with an apex surrounded by {001}, {113}, and {111} facets. The field emission from the protrusions was measured. The onset voltage of the emission from protrusions was lower when they were grown under the electric field. We used Fowler–Nordheim plots to characterize the emission current and voltage conversion factor, β. The results indicated that the application of electric field is beneficial to sharpening Si protrusions grown from Si melt. Such protrusions surrounded by facets are suitable for field emission electron sources with a high local electric field.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2024-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication of a sharp Si protrusion with a faceted apex grown from a surface-melted silicon wafer under high electric and magnetic fields: application to field emission electron sources\",\"authors\":\"Takashi Nishimura and Masahiko Tomitori\",\"doi\":\"10.35848/1347-4065/ad50b4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A silicon (Si) protrusion, grown on a narrow path of a Si(001) wafer by surface melting via resistive heating, was sharpened by applying a local high electric field under a magnetic field during the growth. The electric field caused local stress to the surface-melted Si, which was pulled upward along the field. Consequently, the melted Si formed a sharper protrusion on solidification, with an apex surrounded by {001}, {113}, and {111} facets. The field emission from the protrusions was measured. The onset voltage of the emission from protrusions was lower when they were grown under the electric field. We used Fowler–Nordheim plots to characterize the emission current and voltage conversion factor, β. The results indicated that the application of electric field is beneficial to sharpening Si protrusions grown from Si melt. Such protrusions surrounded by facets are suitable for field emission electron sources with a high local electric field.\",\"PeriodicalId\":14741,\"journal\":{\"name\":\"Japanese Journal of Applied Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Japanese Journal of Applied Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.35848/1347-4065/ad50b4\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad50b4","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Fabrication of a sharp Si protrusion with a faceted apex grown from a surface-melted silicon wafer under high electric and magnetic fields: application to field emission electron sources
A silicon (Si) protrusion, grown on a narrow path of a Si(001) wafer by surface melting via resistive heating, was sharpened by applying a local high electric field under a magnetic field during the growth. The electric field caused local stress to the surface-melted Si, which was pulled upward along the field. Consequently, the melted Si formed a sharper protrusion on solidification, with an apex surrounded by {001}, {113}, and {111} facets. The field emission from the protrusions was measured. The onset voltage of the emission from protrusions was lower when they were grown under the electric field. We used Fowler–Nordheim plots to characterize the emission current and voltage conversion factor, β. The results indicated that the application of electric field is beneficial to sharpening Si protrusions grown from Si melt. Such protrusions surrounded by facets are suitable for field emission electron sources with a high local electric field.
期刊介绍:
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS